RF Power Field Effect Transistor

The RF MOSFET Line RF Power Field Effect Transistor N- Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large- signal,

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MOTOROLA

摩托罗拉

880 MHz, 200 W, 26 V Lateral N-Channel RF Power MOSFET

Overview MRF9210R3 removed from active portfolio. View replacement parts via Part Number Search. \n•Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 1900 mA\nIS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13\nOutput Power: 40 Watts\n\tPower Gain: 16.5 dB\n\tEfficiency: 25.5%\n\tAdjacent Channel Power:\n\t   750 kHz: –46.2 dBc in 30 kHz BW\n\t   1.98 MHz: –60 dBc in 30 kHz BW\n•C;

恩XP

TO270-2

FREESCAL

上传：深圳市正纳电子有限公司

TO-252

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳市赛尔通科技有限公司

高频管

Freescale/飞思卡尔

上传：深圳市翔睿腾科技有限公司