RF Power Field Effect Transistors

文件：557.39 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

RF Power Field Effect Transistors

文件：557.39 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

RF Power Field Effect Transistors

文件：557.39 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

921-960 MHz, 130 W, 28 V, GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

Overview MRF9130LR3, MRF9130LSR3 removed from active portfolio. View replacement parts via Part Number Search. \n•Typical Performance for GSM Frequencies, 921 to 960 MHz, 28 Volts \nOutput Power @ P1dB: 135 Watts\n\tPower Gain: 16.5 dB @ 130 Watts Output Power\n\tEfficiency: 48% @ 130 Watts Output Power\n\n•Capable of Handling 5:1 VSWR, @ 28 Vdc, 945 MHz, 130 Watts CW Output Power\n\n•Internally Matched ;

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