880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for lar

文件：342.87 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for lar

文件：342.87 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFET

Overview MRF9180R6 removed from active portfolio. View replacement parts via Part Number Search. \n•Typical CDMA Performance @ 880 MHz, 26 Volts, I DQ = 1400 mA\nIS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13\nOutput Power: 40 Watts\n\tPower Gain: 17 dB\n\tEfficiency: 26%\n\tAdjacent Channel Power:\n\t   750 kHz: –45.0 dBc in 30 kHz BW\n\t   1.98 MHz: –60.0 dBc in 30 kHz BW\n\n•;

恩XP

880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFET

OverviewMRF9180S removed from active portfolio. Possible Replacement Part: MRF9180R6. \n•Typical CDMA Performance @ 880 MHz, 26 Volts, I DQ = 2 ´ 700 mA\nIS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13\n   Output Power — 40 Watts\n   Power Gain — 17 dB\n   Efficiency — 26%\n   Adjacent Channel Power —\n      750 kHz: –45.0 dBc @ 30 kHz BW\n      1.98 MHz: –60.0 dBc @ 3;

恩XP

FET RF 65V 880MHZ NI-1230

恩XP