880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for lar

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Motorola

摩托罗拉

880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFET

OverviewMRF9180S removed from active portfolio. Possible Replacement Part: MRF9180R6. \n•Typical CDMA Performance @ 880 MHz, 26 Volts, I DQ = 2 ´ 700 mA\nIS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13\n   Output Power — 40 Watts\n   Power Gain — 17 dB\n   Efficiency — 26%\n   Adjacent Channel Power —\n      750 kHz: –45.0 dBc @ 30 kHz BW\n      1.98 MHz: –60.0 dBc @ 3;

恩XP

SAW Filter

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REYCONNS

来亿中国

N Female to 7/16 DIN Female Adapter

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PASTERNACK

VSC9180 Arapahoe - 2.5G SONET/SDH Backplane Transceiver

GENERAL DESCRIPTION The VSC9180 is a multi-rate SONET/SDH transceiver with support for working and protection hitless backplane 1+1 protection. It is designed to serialize four STS-12/STM-4 signals, or byte interleaved SONET/SDH data from 4-bit 622MHz or 16-bit 155MHz parallel buses onto redundan

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VITESSE