GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large–signal, common source ampl

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Motorola

摩托罗拉

GSM/EDGE 900 MHz, 110 W, 26 V Lateral N–Channel RF Power MOSFET

恩XP

SOT143

ON

上传：深圳市英科美电子有限公司

TO270-2

FREESCAL

上传：深圳市正纳电子有限公司

TO-252

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳市赛尔通科技有限公司