RF Power Field Effect Transistors

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, com

文件：316.83 Kbytes 页数：12 Pages

MOTOROLA

摩托罗拉

880 MHz, 120 W, 26 V Lateral N-Channel RF Power MOSFET

恩XP

TO270-2

FREESCAL

上传：深圳市正纳电子有限公司

TO-252

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳市赛尔通科技有限公司

高频管

Freescale/飞思卡尔

上传：深圳市翔睿腾科技有限公司