RF Power Field Effect Transistors

文件：452.02 Kbytes 页数：14 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：581.63 Kbytes 页数：14 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：452.02 Kbytes 页数：14 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：452.02 Kbytes 页数：14 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：581.63 Kbytes 页数：14 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Single W-CDMA Lateral N-Channel RF Power MOSFET, 850-895 MHz, 70 W Avg., 28 V

The MRF8S8260HR3 and MRF8S8260HSR3 are designed for CDMA base station applications with frequencies from 790 to 895 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1500 mA, Pout = 70 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.FrequencyGps(dB)ηD(%)Output PAR(dB)ACPR(dBc)850 MHz21.336.26.5–37.0875 MHz21.437.46.3–3;

恩XP