RF Power Field Effect Transistor N-Channel Enhancement--Mode Lateral MOSFET

920--960 MHz, 58 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Perfor

文件：652.62 Kbytes 页数：13 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：792.02 Kbytes 页数：14 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：792.02 Kbytes 页数：14 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件：792.02 Kbytes 页数：14 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

920-960 MHz，58 W平均值，28 V单载波W-CDMA射频功率LDMOS

The MRF8S9202NR3 and MRF8S9202GNR3 are designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • 100% PAR Tested for Guaranteed Output Power Capability\n• Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters\n• Internally Matched for Ease of Use\n• Integrated ESD Protection\n• Greater Negative Gate-Source Voltage Range for Improved Class C ;

恩XP

恩智浦