RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET

RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications

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freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

1000 MHz, 2 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

Overview MRF9002NR2 removed from active portfolio. View replacement parts via Part Number Search. \n•Typical Performance at 960 MHz, 26 Volts\nOutput Power: 2 Watts Per Transistor\n\tPower Gain: 18 dB\n\tEfficiency: 50%\n\n•Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW Output Power\n\n•Designed for Maximum Gain and Insertion Phase Flatness\n\n•Excellent Thermal Stability\n\n•C;

恩XP

TO-272

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳庞田科技有限公司

TO-272

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

上传：深圳庞田科技有限公司

SOT143

ON

上传：深圳市英科美电子有限公司