MRF9080

RF POWER FIELD EFFECT TRANSISTORS

TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSM900MHzfrequencyband,thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,common–sourceamplifierapplicationsin26voltbasest

MRF9080LR3

RF Power Field Effect Transistors(N−Channel Enhancement−Mode Lateral MOSFETs)

RFPowerFieldEffectTransistors N−ChannelEnhancement−ModeLateralMOSFETs DesignedforGSM900MHzfrequencyband,thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge−signal,common−sourceamplifierapplicationsin26voltbasestationequipment. •TypicalPer

MRF9080LSR3

RF POWER FIELD EFFECT TRANSISTORS

TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSM900MHzfrequencyband,thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,common–sourceamplifierapplicationsin26voltbasest

MRF9080LSR3

RF Power Field Effect Transistors(N−Channel Enhancement−Mode Lateral MOSFETs)

RFPowerFieldEffectTransistors N−ChannelEnhancement−ModeLateralMOSFETs DesignedforGSM900MHzfrequencyband,thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge−signal,common−sourceamplifierapplicationsin26voltbasestationequipment. •TypicalPer

MRF9080R3

RF POWER FIELD EFFECT TRANSISTORS

TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSM900MHzfrequencyband,thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,common–sourceamplifierapplicationsin26voltbasest

MRF9080SR3

RF POWER FIELD EFFECT TRANSISTORS

TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSM900MHzfrequencyband,thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,common–sourceamplifierapplicationsin26voltbasest

MRF9080LR3

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

MRF9080LR3_08

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

MRF9080LR3

包装：卷带（TR） 封装/外壳：SOT-957A 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 960MHZ NI-780

MRF9080LR5

包装：卷带（TR） 封装/外壳：SOT-957A 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 960MHZ NI-780

9080

INSULATEDPCSPACERS/SUPPORTS

9080

Lockit™NylonCableClamps

9080

SnapRivets–continued

9080

Nytye®PushRivets

9080

SnapRivets

9080A

8-BitMicroprocessor

8-BitMicroprocessor

9080F

Lockit™NylonCableClamps

9080F

SnapRivets–continued

9080F

SnapRivets

9080-P

SnapRivets