N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance @ 945 MHz, 28 Volt

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LATERAL N-CHANNEL BROADBAND RF POWER MOSFET

• High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances

文件：56.65 Kbytes 页数：4 Pages

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The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement-Mode Lateral MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common

文件：446.2 Kbytes 页数：8 Pages

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RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source

文件：360.77 Kbytes 页数：8 Pages

MOTOROLA

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RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source

文件：360.77 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source

文件：360.77 Kbytes 页数：8 Pages

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摩托罗拉

RF Power Field Effect Transistors

文件：508.05 Kbytes 页数：8 Pages

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摩托罗拉

RF Power Field Effect Transistors

文件：508.05 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

RF Power Field Effect Transistors

文件：508.05 Kbytes 页数：8 Pages

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摩托罗拉

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：374.03 Kbytes 页数：10 Pages

FREESCALEFreescale Semiconductor, Inc

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