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MRF18060A

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL

文件:393.1 Kbytes 页数:12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MRF18060A

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB

文件:405.18 Kbytes 页数:8 Pages

Motorola

摩托罗拉

MRF18060ALR3

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL

文件:393.1 Kbytes 页数:12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MRF18060ALSR3

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL

文件:393.1 Kbytes 页数:12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MRF18060ALSR3

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB

文件:405.18 Kbytes 页数:8 Pages

Motorola

摩托罗拉

MRF18060AR3

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB

文件:405.18 Kbytes 页数:8 Pages

Motorola

摩托罗拉

MRF18060ASR3

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect TransistorsThe RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB

文件:405.18 Kbytes 页数:8 Pages

Motorola

摩托罗拉

MRF18060B

RF Power Field Effect Transistors

Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz. • GSM Performance, Full Frequency

文件:490.03 Kbytes 页数:8 Pages

Motorola

摩托罗拉

MRF18060B

RF Power Field Effect Transistor

Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL applications. Specified for GSM 1930 - 1990 MHz. • GSM Performance, Full Fre

文件:332.4 Kbytes 页数:12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MRF18060BLR3

RF Power Field Effect Transistor

Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN -PCS/cellular radio and WLL applications. Specified for GSM 1930 - 1990 MHz. • GSM Performance, Full Fre

文件:332.4 Kbytes 页数:12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

技术参数

  • Output Power:

    30W

  • Number of Elements per Chip:

    1

  • Maximum Gate Source Voltage:

    ±20V

  • Maximum Frequency:

    1000MHz

  • Maximum Drain Source Voltage:

    65V

  • Configuration:

    Single

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

供应商型号品牌批号封装库存备注价格
MOTOROLA
17+
0
6200
100%原装正品现货
询价
MOTOROL
25+
10
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询价
FREESCALE
NI-780
298
正品原装--自家现货-实单可谈
询价
FREESCALE
05/06+
52
全新原装100真实现货供应
询价
MOTO
24+
SOP
6980
原装现货,可开13%税票
询价
24+
400
本站现库存
询价
MOTOROLA
24+
原装进口原厂原包接受订货
2866
原装现货假一罚十
询价
MOT
16+
NA
8800
原装现货,货真价优
询价
MOT
23+
高频管
5000
原装正品,假一罚十
询价
MOTOROLA
24+
高频管
5632
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
更多MRF18供应商 更新时间2025-12-11 16:00:00