| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu 文件：379.56 Kbytes 页数：8 Pages | MOTOROLA 摩托罗拉 | MOTOROLA | ||
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu 文件：409.77 Kbytes 页数：8 Pages | MOTOROLA 摩托罗拉 | MOTOROLA | ||
RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full F 文件：610.58 Kbytes 页数：12 Pages | MOTOROLA 摩托罗拉 | MOTOROLA | ||
RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full Frequency Band (193 文件：445.63 Kbytes 页数：12 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | FREESCALE | ||
RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full Frequency Band (193 文件：445.63 Kbytes 页数：12 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | FREESCALE | ||
RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full Frequency Band (193 文件：445.63 Kbytes 页数：12 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | FREESCALE | ||
RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full F 文件：610.58 Kbytes 页数：12 Pages | MOTOROLA 摩托罗拉 | MOTOROLA | ||
RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full F 文件：610.58 Kbytes 页数：12 Pages | MOTOROLA 摩托罗拉 | MOTOROLA | ||
RF Power Field Effect Transistor 1.80-1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFET Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio applications. 文件：388.59 Kbytes 页数：8 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | FREESCALE | ||
RF Power Field Effect Transistor 1.80-1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFET Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for GSM and GSM EDGE cellular radio applications. 文件：388.59 Kbytes 页数：8 Pages | FREESCALEFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | FREESCALE |
技术参数
- Output Power：
30W
- Number of Elements per Chip：
1
- Maximum Gate Source Voltage：
±20V
- Maximum Frequency：
1000MHz
- Maximum Drain Source Voltage：
65V
- Configuration：
Single
- Channel Type：
N
- Channel Mode：
Enhancement
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA |
17+ |
0 |
6200 |
100%原装正品现货 |
询价 | ||
MOTOROL |
25+ |
10 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | |||
FREESCALE |
NI-780 |
298 |
正品原装--自家现货-实单可谈 |
询价 | |||
FREESCALE |
05/06+ |
52 |
全新原装100真实现货供应 |
询价 | |||
MOTO |
24+ |
SOP |
6980 |
原装现货,可开13%税票 |
询价 | ||
24+ |
400 |
本站现库存 |
询价 | ||||
MOTOROLA |
24+ |
原装进口原厂原包接受订货 |
2866 |
原装现货假一罚十 |
询价 | ||
MOT |
16+ |
NA |
8800 |
原装现货,货真价优 |
询价 | ||
MOT |
23+ |
高频管 |
5000 |
原装正品,假一罚十 |
询价 | ||
MOTOROLA |
24+ |
高频管 |
5632 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 |
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