100 V, 3 A NPN high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • High current gain at VCE = 60 V • Electrically similar to popular MJD31 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to

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NEXPERIA

安世

100V NPN HIGH VOLTAGE TRANSISTOR IN TO252

Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 100V • IC = 3A high Continuous Collector Current • ICM = 5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • C

文件：316.5 Kbytes 页数：7 Pages

DIODES

美台半导体

100V NPN HIGH VOLTAGE TRANSISTOR IN TO252

Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 100V • IC = 3A high Continuous Collector Current • ICM = 5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • C

文件：316.5 Kbytes 页数：7 Pages

DIODES

美台半导体

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi

文件：129.229 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

Low voltage NPN power transistor

Description The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP typ

文件：243.6 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Low voltage NPN power transistor

Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. General features ■ This device is qualified for automotive application ■ Surface-mounting

文件：241.24 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi

文件：129.229 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

Silicon NPN epitaxial planer Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Electrically Similar to Popular TIP31 and TIP32

文件：598.47 Kbytes 页数：4 Pages

MCC

100V NPN HIGH VOLTAGE TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 100V • IC = 3A high Continuous Collector Current • ICM = 5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Complem

文件：382.34 Kbytes 页数：7 Pages

DIODES

美台半导体

100V NPN HIGH VOLTAGE TRANSISTOR IN TO252

文件：314.68 Kbytes 页数：7 Pages

DIODES

美台半导体