| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MJD31C | Discrete and MOSFET components, analog & logic ICs 文件:11.62183 Mbytes 页数:234 Pages | NEXPERIA 安世 | NEXPERIA | |
MJD31C | Discrete and MOSFET components, analog & logic ICs 文件:11.62178 Mbytes 页数:234 Pages | NEXPERIA 安世 | NEXPERIA | |
MJD31C | isc Silicon NPN Power Transistors 文件:334.23 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
MJD31C | 100V NPN HIGH VOLTAGE TRANSISTOR 文件:372.99 Kbytes 页数:7 Pages | DIODES 美台半导体 | DIODES | |
丝印:MJD31CA;Package:DPAK;100 V, 3 A NPN high power bipolar transistor 1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32CA 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Elec 文件:231.53 Kbytes 页数:11 Pages | NEXPERIA 安世 | NEXPERIA | ||
丝印:MJD31CAH;Package:DPAK;100 V, 3 A NPN high power bipolar transistor Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • High current gain at VCE = 60 V • Electrically similar to popular MJD31 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to 文件:226.32 Kbytes 页数:11 Pages | NEXPERIA 安世 | NEXPERIA | ||
丝印:MJD31CU;Package:TO-252;100V NPN HIGH VOLTAGE TRANSISTOR Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 100V • IC = 3A high Continuous Collector Current • ICM = 5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Complem 文件:382.34 Kbytes 页数:7 Pages | DIODES 美台半导体 | DIODES | ||
NPN SURFACE MOUNT TRANSISTOR Features • BVCEO > 100V • IC = 3A high Continuous Collector Current • ICM = 5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Complementary PNP Type: MJD32C • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” 文件:126.03 Kbytes 页数:5 Pages | DIODES 美台半导体 | DIODES | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi 文件:129.229 Kbytes 页数:11 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi 文件:129.229 Kbytes 页数:11 Pages | ONSEMI 安森美半导体 | ONSEMI |
产品属性
- 产品编号:
MJD31C
- 制造商:
STMicroelectronics
- 类别:
分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个
- 包装:
散装
- 晶体管类型:
NPN
- 不同 Ib、Ic 时 Vce 饱和压降(最大值):
1.2V @ 375mA,3A
- 电流 - 集电极截止(最大值):
50µA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):
10 @ 3A,4V
- 工作温度:
150°C(TJ)
- 安装类型:
表面贴装型
- 封装/外壳:
TO-252-3,DPak(2 引线 + 接片),SC-63
- 供应商器件封装:
DPAK
- 描述:
TRANS NPN 100V 3A DPAK
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NK/南科功率 |
2025 |
TO-252 |
3200 |
国产南科 |
询价 | ||
CJ/长电 |
25+ |
TO-252 |
32360 |
CJ/长电全新特价MJD31C即刻询购立享优惠#长期有货 |
询价 | ||
DIODES |
SOT-252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
询价 | |||
ON |
23+ |
DPAK |
56000 |
询价 | |||
CJ/长电 |
24+ |
TO-252 |
3580 |
原装现货/15年行业经验欢迎询价 |
询价 | ||
ON |
24+ |
TO-252 |
15300 |
绝对原装现货,价格低,欢迎询购! |
询价 | ||
ON |
24+ |
DPAK-3 |
14950 |
询价 | |||
CJ/长电 |
2021+ |
TO-252 |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
CJ |
24+ |
TO252 |
7850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
ON |
25+ |
DPAK |
18000 |
原厂直接发货进口原装 |
询价 |
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