| 零件型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MJD31C | 100V NPN HIGH VOLTAGE TRANSISTOR | DIODESDiodes Incorporated 美台半导体 | DIODES | |
MJD31C | Complementary Power Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
MJD31C | Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 100V 3A DPAK | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | |
NPN SURFACE MOUNT TRANSISTOR Features •BVCEO>100V •IC=3AhighContinuousCollectorCurrent •ICM=5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •ComplementaryPNPType:MJD32C •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green” | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
Complementary Power Transistors ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
丝印：MJD31CA；Package：DPAK；100 V, 3 A NPN high power bipolar transistor 1.Generaldescription NPNhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:MJD32CA 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Elec | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Complementary Power Transistors ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
丝印：MJD31CAH；Package：DPAK；100 V, 3 A NPN high power bipolar transistor Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •HighcurrentgainatVCE=60V •ElectricallysimilartopopularMJD31series •Lowcollectoremittersaturationvoltage •Fastswitchingspeeds •Qualifiedaccordingto | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
100 V, 3 A NPN high power bipolar transistor Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •HighcurrentgainatVCE=60V •ElectricallysimilartopopularMJD31series •Lowcollectoremittersaturationvoltage •Fastswitchingspeeds •Qualifiedaccordingto | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
100V NPN HIGH VOLTAGE TRANSISTOR IN TO252 Description ThisBipolarJunctionTransistor(BJT)hasbeendesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>100V •IC=3AhighContinuousCollectorCurrent •ICM=5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •C | DIODESDiodes Incorporated 美台半导体 | DIODES |
产品属性
- 产品编号：
MJD31C
- 制造商：
STMicroelectronics
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
散装
- 晶体管类型：
NPN
- 不同 Ib、Ic 时 Vce 饱和压降（最大值）：
1.2V @ 375mA，3A
- 电流 - 集电极截止（最大值）：
50µA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
10 @ 3A，4V
- 工作温度：
150°C（TJ）
- 安装类型：
表面贴装型
- 封装/外壳：
TO-252-3，DPak（2 引线 + 接片），SC-63
- 供应商器件封装：
DPAK
- 描述：
TRANS NPN 100V 3A DPAK
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NK/南科功率 |
2025 |
TO-252 |
3200 |
国产南科 |
询价 | ||
CJ/长电 |
25+ |
TO-252 |
32360 |
CJ/长电全新特价MJD31C即刻询购立享优惠#长期有货 |
询价 | ||
DIODES |
SOT-252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
询价 | |||
ON |
23+ |
DPAK |
56000 |
询价 | |||
CJ/长电 |
24+ |
TO-252 |
3580 |
原装现货/15年行业经验欢迎询价 |
询价 | ||
ON/安森美 |
24+ |
DPAK |
20000 |
只做原厂渠道 可追溯货源 |
询价 | ||
ON |
24+ |
TO-252 |
15300 |
绝对原装现货,价格低,欢迎询购! |
询价 | ||
ON |
24+ |
DPAK-3 |
14950 |
询价 | |||
CJ/长电 |
2021+ |
TO-252 |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
ST/意法 |
24+ |
TO-252 |
504580 |
免费送样原盒原包现货一手渠道联系 |
询价 |
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