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MJD31C

Discrete and MOSFET components, analog & logic ICs

文件:11.62183 Mbytes 页数:234 Pages

NEXPERIA

安世

MJD31C

Discrete and MOSFET components, analog & logic ICs

文件:11.62178 Mbytes 页数:234 Pages

NEXPERIA

安世

MJD31C

isc Silicon NPN Power Transistors

文件:334.23 Kbytes 页数:2 Pages

ISC

无锡固电

MJD31C

100V NPN HIGH VOLTAGE TRANSISTOR

文件:372.99 Kbytes 页数:7 Pages

DIODES

美台半导体

MJD31CA

丝印:MJD31CA;Package:DPAK;100 V, 3 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32CA 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Elec

文件:231.53 Kbytes 页数:11 Pages

NEXPERIA

安世

MJD31CH-Q

丝印:MJD31CAH;Package:DPAK;100 V, 3 A NPN high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • High current gain at VCE = 60 V • Electrically similar to popular MJD31 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to

文件:226.32 Kbytes 页数:11 Pages

NEXPERIA

安世

MJD31CUQ-13

丝印:MJD31CU;Package:TO-252;100V NPN HIGH VOLTAGE TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 100V • IC = 3A high Continuous Collector Current • ICM = 5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Complem

文件:382.34 Kbytes 页数:7 Pages

DIODES

美台半导体

MJD31C-13

NPN SURFACE MOUNT TRANSISTOR

Features • BVCEO > 100V • IC = 3A high Continuous Collector Current • ICM = 5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Complementary PNP Type: MJD32C • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green”

文件:126.03 Kbytes 页数:5 Pages

DIODES

美台半导体

MJD31C1G

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi

文件:129.229 Kbytes 页数:11 Pages

ONSEMI

安森美半导体

MJD31CG

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi

文件:129.229 Kbytes 页数:11 Pages

ONSEMI

安森美半导体

产品属性

  • 产品编号:

    MJD31C

  • 制造商:

    STMicroelectronics

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    散装

  • 晶体管类型:

    NPN

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    1.2V @ 375mA,3A

  • 电流 - 集电极截止(最大值):

    50µA

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    10 @ 3A,4V

  • 工作温度:

    150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-252-3,DPak(2 引线 + 接片),SC-63

  • 供应商器件封装:

    DPAK

  • 描述:

    TRANS NPN 100V 3A DPAK

供应商型号品牌批号封装库存备注价格
NK/南科功率
2025
TO-252
3200
国产南科
询价
CJ/长电
25+
TO-252
32360
CJ/长电全新特价MJD31C即刻询购立享优惠#长期有货
询价
DIODES
SOT-252
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
ON
23+
DPAK
56000
询价
CJ/长电
24+
TO-252
3580
原装现货/15年行业经验欢迎询价
询价
ON
24+
TO-252
15300
绝对原装现货,价格低,欢迎询购!
询价
ON
24+
DPAK-3
14950
询价
CJ/长电
2021+
TO-252
9000
原装现货,随时欢迎询价
询价
CJ
24+
TO252
7850
只做原装正品现货或订货假一赔十!
询价
ON
25+
DPAK
18000
原厂直接发货进口原装
询价
更多MJD31C供应商 更新时间2025-12-11 10:01:00