丝印：MJD31C；Package：DPAK；100 V, 3 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32C 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Elect

文件：230.43 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：MJD31C；Package：SOT-428；NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor Features • General Purpose Amplifier • Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP31 and TIP31C

文件：227.74 Kbytes 页数：6 Pages

Fairchild

仙童半导体

丝印：MJD31C；Package：TO-252；100V NPN HIGH VOLTAGE TRANSISTOR

文件：372.99 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：MJD31C；Package：TO-252；100V NPN HIGH VOLTAGE TRANSISTOR

文件：456.21 Kbytes 页数：7 Pages

DIODES

美台半导体

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.2V(Max) @IC= 3A ·Complement to Type MJD32C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

文件：278.25 Kbytes 页数：2 Pages

ISC

无锡固电

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • Designed for General Purpose Amplifier and Low Speed Switching Applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version in 16 mm Tape and Reel (“T4” Suff

文件：913.5 Kbytes 页数：3 Pages

JIANGSU

长电科技

Complementary Power Transistors

Features ● Lead Formed for Surface Mount Applications in Plastic Sleeves ● Pb-Free Packages are Available

文件：47.86 Kbytes 页数：2 Pages

KEXIN

科信电子

3A , 100V NPN Plastic Encapsulated Transistor

FEATURES • Designed for general • Excellent DC Current Gain Characteristics

文件：78.27 Kbytes 页数：1 Pages

SECOS

喜可士

Complementary Silicon Power Ttransistors

DESCRIPTION It is intented for use in power amplif)ier and switching applications.

文件：358.17 Kbytes 页数：1 Pages

TGS

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX

文件：65.36 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体