| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MJD31C | SILICON POWER TRANSISTORS ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
MJD31C | COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION TheMJD31BandMJD31CandtheMJD32BandMJD32CformcomplementaryNPN-PNPpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK)POWERPACKAGEINTAPE&REEL(SUFFIX | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | |
MJD31C | General Purpose Amplifier Low Speed Switching Applications NPNEpitaxialSiliconTransistor Features •GeneralPurposeAmplifier •LowSpeedSwitchingApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularTIP31andTIP31C | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
MJD31C | NPN SURFACE MOUNT TRANSISTOR Features •BVCEO>100V •IC=3AhighContinuousCollectorCurrent •ICM=5APeakPulseCurrent •IdealforPowerSwitchingorAmplificationApplications •ComplementaryPNPType:MJD32C •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green” | DIODESDiodes Incorporated 美台半导体 | DIODES | |
MJD31C | Complementary Power Transistors Features ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves ●Pb-FreePackagesareAvailable | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | |
MJD31C | Marking：D-PAK；Package：TO-252；TRANSISTOR (NPN) FEATURES ●DesignedforGeneralPurposeAmplifierand LowSpeedSwitchingApplications. ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) ●StraightLeadVersioninPlasticSleeves(“–1”Suffix) ●LeadFormedVersionin16mmTapeandReel(“T4”Suffix) ●Electri | FS First Silicon Co., Ltd | FS | |
MJD31C | Complementary Power Transistors ComplementaryPowerTransistorsDPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves •StraightLeadVersioninPlasticSleeves(“1”Suffix) •LeadFormedVersi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
MJD31C | 3A , 100V NPN Plastic Encapsulated Transistor FEATURES •Designedforgeneral •ExcellentDCCurrentGainCharacteristics | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | |
MJD31C | Complementary Silicon Power Ttransistors DESCRIPTION Itisintentedforuseinpoweramplif)ierandswitchingapplications. | TGS Tiger Electronic Co.,Ltd | TGS | |
MJD31C | Silicon NPN epitaxial planer Transistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHS Compliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •ElectricallySimilartoPopularTIP31andTIP32 | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC |
产品属性
- 产品编号：
MJD31C
- 制造商：
STMicroelectronics
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
散装
- 晶体管类型：
NPN
- 不同 Ib、Ic 时 Vce 饱和压降（最大值）：
1.2V @ 375mA，3A
- 电流 - 集电极截止（最大值）：
50µA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
10 @ 3A，4V
- 工作温度：
150°C（TJ）
- 安装类型：
表面贴装型
- 封装/外壳：
TO-252-3，DPak（2 引线 + 接片），SC-63
- 供应商器件封装：
DPAK
- 描述：
TRANS NPN 100V 3A DPAK
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NK/南科功率 |
2025 |
TO-252 |
3200 |
国产南科 |
询价 | ||
CJ/长电 |
25+ |
TO-252 |
32360 |
CJ/长电全新特价MJD31C即刻询购立享优惠#长期有货 |
询价 | ||
DIODES |
SOT-252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
询价 | |||
ON |
23+ |
DPAK |
56000 |
询价 | |||
CJ/长电 |
24+ |
TO-252 |
3580 |
原装现货/15年行业经验欢迎询价 |
询价 | ||
ON/安森美 |
24+ |
DPAK |
20000 |
只做原厂渠道 可追溯货源 |
询价 | ||
ON |
24+ |
TO-252 |
15300 |
绝对原装现货,价格低,欢迎询购! |
询价 | ||
ON |
24+ |
DPAK-3 |
14950 |
询价 | |||
CJ/长电 |
2021+ |
TO-252 |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
ST/意法 |
24+ |
TO-252 |
504580 |
免费送样原盒原包现货一手渠道联系 |
询价 |
相关规格书
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