丝印：MJD31C；Package：DPAK；100 V, 3 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32C 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Elect

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NEXPERIA

安世

丝印：D-PAK；Package：TO-252；TRANSISTOR (NPN)

FEATURES ● Designed for General Purpose Amplifier and Low Speed Switching Applications. ● Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) ● Straight Lead Version in Plastic Sleeves (“–1” Suffix) ● Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) ● Electri

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FS

Silicon NPN epitaxial planer Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Electrically Similar to Popular TIP31 and TIP32

文件：598.47 Kbytes 页数：4 Pages

MCC

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.2V(Max) @IC= 3A ·Complement to Type MJD32C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

文件：278.25 Kbytes 页数：2 Pages

ISC

无锡固电

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • Designed for General Purpose Amplifier and Low Speed Switching Applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version in 16 mm Tape and Reel (“T4” Suff

文件：913.5 Kbytes 页数：3 Pages

JIANGSU

长电科技

Complementary Power Transistors

Features ● Lead Formed for Surface Mount Applications in Plastic Sleeves ● Pb-Free Packages are Available

文件：47.86 Kbytes 页数：2 Pages

KEXIN

科信电子

3A , 100V NPN Plastic Encapsulated Transistor

FEATURES • Designed for general • Excellent DC Current Gain Characteristics

文件：78.27 Kbytes 页数：1 Pages

SECOS

喜可士

Complementary Silicon Power Ttransistors

DESCRIPTION It is intented for use in power amplif)ier and switching applications.

文件：358.17 Kbytes 页数：1 Pages

TGS

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX

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STMICROELECTRONICS

意法半导体

Low voltage NPN power transistor

Description The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP typ

文件：243.6 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体