MJD31资料使用说明书供应价格第4页-114ic电子网

首页 >MJD31>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
MJD31CRLG	文件：129.229 Kbytes Page：11 Pages	Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi 文件：129.229 Kbytes 页数：11 Pages	ONSEMI 安森美半导体	ONSEMI
MJD31CT4	文件：243.6 Kbytes Page：9 Pages	Low voltage NPN power transistor Description The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP typ 文件：243.6 Kbytes 页数：9 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
MJD31CT4-A	文件：241.24 Kbytes Page：9 Pages	Low voltage NPN power transistor Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. General features ■ This device is qualified for automotive application ■ Surface-mounting 文件：241.24 Kbytes 页数：9 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
MJD31CT4G	文件：129.229 Kbytes Page：11 Pages	Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi 文件：129.229 Kbytes 页数：11 Pages	ONSEMI 安森美半导体	ONSEMI
MJD31CTF	文件：227.74 Kbytes Page：6 Pages	丝印：MJD31C；Package：SOT-428；NPN Epitaxial Silicon Transistor NPN Epitaxial Silicon Transistor Features • General Purpose Amplifier • Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP31 and TIP31C 文件：227.74 Kbytes 页数：6 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
MJD31C-TP	文件：598.47 Kbytes Page：4 Pages	Silicon NPN epitaxial planer Transistors Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Electrically Similar to Popular TIP31 and TIP32 文件：598.47 Kbytes 页数：4 Pages	MCC	MCC
MJD31CUQ	文件：382.34 Kbytes Page：7 Pages	100V NPN HIGH VOLTAGE TRANSISTOR Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 100V • IC = 3A high Continuous Collector Current • ICM = 5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Complem 文件：382.34 Kbytes 页数：7 Pages	DIODES 美台半导体	DIODES
MJD31CUQ-13	文件：382.34 Kbytes Page：7 Pages	丝印：MJD31CU；Package：TO-252；100V NPN HIGH VOLTAGE TRANSISTOR Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 100V • IC = 3A high Continuous Collector Current • ICM = 5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Complem 文件：382.34 Kbytes 页数：7 Pages	DIODES 美台半导体	DIODES
MJD31T4G	文件：129.229 Kbytes Page：11 Pages	Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi 文件：129.229 Kbytes 页数：11 Pages	ONSEMI 安森美半导体	ONSEMI
MJD31_05	文件：81.61 Kbytes Page：8 Pages	Complementary Power Transistors 文件：81.61 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI

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晶体管资料

型号：
MJD31
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
性质：
低频或音频放大（LF）_功率放大（PA）
封装形式：
贴片封装
极限工作电压：
最大电流允许值：
3A
最大工作频率：
<1MHZ或未知
引脚数：
3
可代换的型号：
最大耗散功率：
15W
放大倍数：
图片代号：
G-217
vtest：
0
htest：
999900
atest：
3
wtest：
15

技术参数

Pb-free：
Pb
AEC Qualified：
A
Halide free：
H
PPAP Capablee：
P
Status：
Active
Polarity：
NPN
Type：
General Purpose
VCE(sat) Max (V)：
1.2
IC Cont. (A)：
3
VCEO Min (V)：
40
VCBO (V)：
40
VEBO (V)：
5
VBE(on) (V)：
1.8
hFE Min：
10
hFE Max：
50
fT Min (MHz)：
3
PTM Max (W)：
15
Package Type：
DPAK-3

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	MJD31	ONSEMI	25+	N/A	11543	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
深圳市弘为电子有限公司	MJD31	ONSEMICONDU	24+	原装进口原厂原包接受订货	2866	原装现货假一罚十	询价
深圳市华来深电子有限公司	MJD31	ON	23+	TO-252	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳市赛芯源科技有限公司	MJD31	ON	18+	TO-252	41200	原装正品,现货特价	询价
深圳市威尔健半导体有限公司	MJD31	ON/安森美	23+	TO-252	50000	全新原装正品现货,支持订货	询价
标准国际(香港)有限公司	MJD31	MJD31	25+	3	3		询价
深圳市金芯世纪电子有限公司	MJD31	ON/安森美	22+	TO-252	100000	代理渠道/只做原装/可含税	询价
深圳市羿芯诚电子有限公司	MJD31	ON/安森美	24+	TSSOP	10000	原装进口只做订货寻找优势渠道合作	询价
深圳诚思涵科技有限公司	MJD31	ON(安森美)	23+	标准封装	5000	原厂原装现货订货价格优势终端BOM表可配单提供样品	询价
深圳市晨豪科技有限公司	MJD31	ON/安森美	23+	TO-252	89630	当天发货全新原装现货	询价

更多MJD31供应商更新时间2026-1-17 22:59:00

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