General Purpose Amplifier Low Speed Switching Applications

NPN Epitaxial Silicon Transistor Features • General Purpose Amplifier • Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP31 and TIP31C

文件：49.27 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

SILICON POWER TRANSISTORS

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Lead Formed Versi

文件：150.43 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

NPN SURFACE MOUNT TRANSISTOR

Features • BVCEO > 100V • IC = 3A high Continuous Collector Current • ICM = 5A Peak Pulse Current • Ideal for Power Switching or Amplification Applications • Complementary PNP Type: MJD32C • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green”

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DIODES

美台半导体

Silicon NPN epitaxial planer Transistors

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Electrically Similar to Popular TIP31 and TIP32

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MCC

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.2V(Max) @IC= 3A ·Complement to Type MJD32C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

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ISC

无锡固电

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • Designed for General Purpose Amplifier and Low Speed Switching Applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version in 16 mm Tape and Reel (“T4” Suff

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JIANGSU

长电科技

Complementary Power Transistors

Features ● Lead Formed for Surface Mount Applications in Plastic Sleeves ● Pb-Free Packages are Available

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KEXIN

科信电子

3A , 100V NPN Plastic Encapsulated Transistor

FEATURES • Designed for general • Excellent DC Current Gain Characteristics

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SECOS

喜可士

Complementary Silicon Power Ttransistors

DESCRIPTION It is intented for use in power amplif)ier and switching applications.

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TGS

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The MJD31B and MJD31C and the MJD32B and MJD32C form complementary NPN-PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX

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STMICROELECTRONICS

意法半导体