MJD200RL

Complementary Plastic Power Transistors

MJD200RLG

Complementary Plastic Power Transistors

MJD200RLG

Complementary Plastic Power Transistors

MJD200RLG

Complementary Plastic Power Transistors

MJD200RLG

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 25V 5A DPAK

MJE200

5AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON25VOLTS15WATTS

ComplementarySiliconPowerPlasticTransistors ...designedforlowvoltage,low–power,high–gainaudioamplifierapplications. •Collector–EmitterSustainingVoltage— VCEO(sus)=25Vdc(Min)@IC=10mAdc •HighDCCurrentGain—hFE=70(Min)@IC=500mAdc High

MJE200

POWERTRANSISTORSCOMPLEMENTARYSILICON

ComplementarySiliconPowerPlasticTransistors Thesedevicesaredesignedforlowvoltage,low-power,high-gainaudioamplifierapplications. Features •Collector-EmitterSustainingVoltage-VCEO(sus)=25Vdc(Min)@IC=10mAdc •HighDCCurrentGain-hFE=70(Min)@IC=500mAdc

MJE200

NPNEpitaxialSiliconTransistor

Feature •LowCollector-EmitterSaturationVoltage •HighCurrentGainBandwidthProduct:fT=65MHz@IC=100mA(Min.) •ComplementtoMJE210

MJE200

iscSiliconNPNPowerTransistor

DESCRIPTION •LowCollector–EmitterSaturationVoltage- •DCCurrentGain-BandwidthProduct •HighDCCurrentGain •ComplementtoMJE210 APPLICATIONS •Designedforlowvoltage,low-power,high-gainaudioamplifierapplications.

MJE200

ComplementarySiliconPowerPlasticTransistors