10 Amp NPN Silicon Power Transistors 125W

Features • High Collector-Emitter Voltage VCES=400V • DC Current Gain Specified 3.5A • High Frequency Response to 2.5 MHz

文件：108.72 Kbytes 页数：2 Pages

MCC

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Voltage- : VCEX = 400V(Min) • DC Current Gain- : hFE= 15-35@ IC= 2.5A APPLICATIONS • Designed for medium-to-high-voltage inverters, converters, regulators and switching circuits.

文件：142.53 Kbytes 页数：2 Pages

ISC

无锡固电

10 Amp NPN Silicon Power Transistors 125W

Features • High Collector-Emitter Voltage VCEs=400V • DC Current Gain Specified 3.5A • High Frequency Response to 2.5MHz

文件：83.74 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

125W NPN High Power BJT Transistor

This BJT is packaged in TO-3 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

Digitron