MJD41C

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKforSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“1”Suffix) •Elect

MJD41C

General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications

GeneralPurposeAmplifier LowSpeedSwitchingApplications D-PAKforSurfaceMountApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularTIP41andTIP41C

MJD41C

Complementary Power Transistors

Features ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves ●MonolithicConstructionWithBuilt?inBase?EmitterResistors ●Pb-FreePackagesareAvailable

MJD41C

NPN PLASTIC ENCAPSULATE TRANSISTORS

NPNPLASTICENCAPSULATETRANSISTORS Features: *Designedforgeneralpurposeamplierandlowspeedswitchingapplications. *MonolithicConstructionWithBuilt–inBase–EmitterResistors.

MJD41C

isc Silicon NPN Power Transistors

DESCRIPTION •DCCurrentGain-hFE=30(Min)@IC=0.3A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=100V(Min) •ComplementtoTypeMJD42C •DPAKforSurfaceMountApplications •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Design

MJD41C

Complementary Silicon Power Ttransistors

DESCRIPTION Itisintentedforuseinpoweramplifierandswitchingapplications.

MJD41C

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES •DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications. •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionin16mmTapeandReel(“T4”Suff

MJD41C

Marking：MJD41C；Package：DPAK；100 V, 6 A NPN high power bipolar transistor

Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •ElectricallysimilartopopularMJD41series •Lowcollectoremittersaturationvoltage •Fastswitchingspeeds Applications •Powermanagement •Loadswitch •Linear

MJD41C

Marking：MJD41CXXXX；Package：TO-252-2L；TO-252-2L Plastic-Encapsulate Transistors

FEATURES DesignedforGeneralPurposeAmplifierandLowSpeed SwitchingApplications. LeadFormedforSurfaceMountApplicationsinPlastic Sleeves(NoSuffix) StraightLeadVersioninPlasticSleeves(“–1”Suffix) LeadFormedVersionin16mmTapeandReel(“T4”Suffix) ElectricallySimil

MJD41C

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.5V(Max)@IC=6A ·ComplementtoTypeMJD42C APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications