L,S BAND POWER GaAs FET?

DESCRIPTION The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • High output power Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm • High power gain Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm • High power added efficiency P.A.E =40(TYP.)

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三菱电机

L,S BAND POWER GaAs FET?

DESCRIPTION The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES High output power Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm High power gain Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm High power added efficiency P.A.E =4

文件：316.82 Kbytes 页数：4 Pages

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三菱电机

High-power GaAs FET (small signal gain stage)

文件：157.19 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

L,S BAND POWER GaAs FET?

DESCRIPTION The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES High output power Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm High power gain Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm High power added efficiency P.A.E =4

文件：316.82 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

High-power GaAs FET (small signal gain stage)

文件：157.19 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

GaAs FET with an N-channel schottky gate

DESCRIPTION\nThe MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.\nFEATURES\nHigh output power\n   Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm\nHigh power gain\n   Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm\nHigh power added efficiency\n   P.A.E =40%(TYP.) @f=1. High output power\n   Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm\nHigh power gain\n   Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm\nHigh power added efficiency\n   P.A.E =40%(TYP.) @f=1.65GHz,Pin=26dBmAPPLICATION\nFor UHF Band power amplifiersQUALITY\nGGRECOMMENDED BIAS CONDITIONS\nVds=8V\nIds=800mA\nRg=100Ω\;

MITSUBISHI

三菱电机

GaAs FET with an N-channel schottky gate L,S BAND POWER GaAs FET

DESCRIPTION\nThe MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.\nFEATURES\nHigh output power\n   Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm\nHigh power gain\n   Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm\nHigh power added efficiency\n   P.A.E =40%(TYP.) @f=1. High output power\n   Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm\nHigh power gain\n   Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm\nHigh power added efficiency\n   P.A.E =40%(TYP.) @f=1.65GHz,Pin=26dBmAPPLICATION\nFor UHF Band power amplifiersQUALITY\nGGRECOMMENDED BIAS CONDITIONS\nVds=8V\nIds=800mA\nRg=100Ω\;

MITSUBISHI

三菱电机