L & S BAND GaAs FET [ SMD non - matched ]

DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm High power gain Gp=13dB(TYP.) @f=1.9GHz High power added efficiency nadd=48(TYP.

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MITSUBISHI

三菱电机

High-power GaAs FET (small signal gain stage)

文件：113.35 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

High-power GaAs FET (small signal gain stage)

文件：113.35 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

L & S BAND / 1.2W High-power GaAs FET

DESCRIPTION\nThe MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.\nFEATURES\nHigh output power \n       Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm\nHigh power gain\n      Gp=13dB(TYP.) @f=1.9GHz\nHigh power added efficiency\n   nadd=48%(TYP.) @f=1.9GHz,Pin=18d High output power \n       Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm\nHigh power gain\n      Gp=13dB(TYP.) @f=1.9GHz\nHigh power added efficiency\n   nadd=48%(TYP.) @f=1.9GHz,Pin=18dBm\nHermetic Package\nAPPLICATION\nFor UHF Band power amplifiers;

MITSUBISHI

三菱电机