L & S BAND GaAs FET ( SMD non - matched )

文件：47.07 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

High-power GaAs FET (small signal gain stage)

文件：113.43 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

High-power GaAs FET (small signal gain stage)

文件：113.43 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

High-power GaAs FET (small signal gain stage)

MITSUBISHI

三菱电机

High-power GaAs FET (small signal gain stage)

DESCRIPTION\nThe MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.\n\nFEATURES\nHigh output power \n  Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm\nHigh power gain\n  Gp=19dB(TYP.) @f=1.9GHz\nHigh power added efficiency\n  add=30%(TYP.) @f=1.9GHz,Pin=5dBm\nHermetic High output power \n  Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm\nHigh power gain\n  Gp=19dB(TYP.) @f=1.9GHz\nHigh power added efficiency\n  add=30%(TYP.) @f=1.9GHz,Pin=5dBm\nHermetic Package\n\nAPPLICATION\nFor UHF Band power amplifiers;

MinebeaMitsumi

美蓓亚三美