LOW NOISE GaAs FET

DESCRIPTION The MGF1302 is a low-noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits. FEATURES

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MITSUBISHI

三菱电机

低噪声GaAs FET

MITSUBISHI

三菱电机

LOW NOISE GaAs FET

文件：361.76 Kbytes 页数：6 Pages

MITSUBISHI

三菱电机

COMEPLEMENTARY NPN-PNP SILICON POWER BOPOLAR TRANSISTOR

文件：221.68 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS MJL1302A -->PNP MJL3281A -->NPN • The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gai

文件：203.73 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

COMPLEMENTARY SILICON POWER TRANSISTORS

15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 200 WATTS MJL3281A (NPN) MJL1302A (PNP) The MJL3281A and MJL1302A are PowerBase
power transistors for high power audio, disk head positioners and other linear Features •Exceptional Safe Operating Area •NPN/PNP Gai

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ONSEMI

安森美半导体