MICROWAVE POWER GaAs FET

High-power GaAs FET (small signal gain stage) S to X BAND / 0.15W non - matched DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic

文件：26.02 Kbytes 页数：3 Pages

Mitsubishi

三菱电机

MICROWAVE POWER GaAs FET

文件：203.9 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

High-power GaAs FET (small signal gain stage)

文件：213.38 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

MICROWAVE POWER GaAs FET

文件：203.9 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

High-power GaAs FET (small signal gain stage)

文件：213.38 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

High-power GaAs FET

文件：288.14 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

High-power GaAs FET (small signal gain stage)

High-power GaAs FET (small signal gain stage)\nS to X BAND / 0.15W non - matchedDESCRIPTION\nThe MGF1601B, medium-power GaAs FET with an N-channel  Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic las High linear power gain \n  Glp=8.0dB @f=8GHz\nHigh P1dB\n  P1dB=21.8dBm(TYP.) @f=8GHzAPPLICATION\nS to X Band medium-power amplifiers and oscillators;

MITSUBISHI

三菱电机