MGF1601B数据手册MITSUBISHI中文资料规格书
MGF1601B规格书详情
描述 Description
High-power GaAs FET (small signal gain stage)
S to X BAND / 0.15W non - matchedDESCRIPTION
The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic lasses, and has a configuration suitable for microstrip circuits.FEATURES
High linear power gain
Glp=8.0dB @f=8GHz
High P1dB
P1dB=21.8dBm(TYP.) @f=8GHzAPPLICATION
S to X Band medium-power amplifiers and oscillators
特性 Features
High linear power gain
Glp=8.0dB @f=8GHz
High P1dB
P1dB=21.8dBm(TYP.) @f=8GHzAPPLICATION
S to X Band medium-power amplifiers and oscillators
技术参数
- 型号：
MGF1601B
- 制造商：
MITSUBISHI
- 制造商全称：
Mitsubishi Electric Semiconductor
- 功能描述：
High-power GaAs FET(small signal gain stage)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MITSUBISHI/三菱 |
24+ |
NA/ |
1900 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
MIT |
01+ |
N/A |
29 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
MITSUBISHI/三菱 |
2021+ |
3000 |
十年专营原装现货,假一赔十 |
询价 | |||
2017+ |
SMD |
1585 |
只做原装正品假一赔十! |
询价 | |||
MIT |
2010+ |
GD-10 |
6000 |
绝对原装自己现货 |
询价 | ||
MITSUBISHI |
24+ |
2789 |
全新原装自家现货!价格优势! |
询价 | |||
MITSUBIS |
22+ |
GD-10 |
3000 |
原装正品,支持实单 |
询价 | ||
QORVO |
24+ |
SMD |
5000 |
QORVO“芯达集团”专营品牌原装正品假一罚十 |
询价 | ||
MITSUBISHI |
05+ |
GD10 |
30 |
原装现货价格有优势量大可以发货 |
询价 | ||
MITSUBISHI/三菱 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
询价 |
