MGF0919A中文资料High-power GaAs FET (small signal gain stage)数据手册MinebeaMitsumi规格书
MGF0919A规格书详情
描述 Description
DESCRIPTION
The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.FEATURES
High output power
Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm
High power gain
Gp=19dB(TYP.) @f=1.9GHz
High power added efficiency
add=37%(TYP.) @f=1.9GHz,Pin=12dBm
Hermetic PackageAPPLICATION
For UHF Band power amplifiers
特性 Features
High output power
Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm
High power gain
Gp=19dB(TYP.) @f=1.9GHz
High power added efficiency
add=37%(TYP.) @f=1.9GHz,Pin=12dBm
Hermetic PackageAPPLICATION
For UHF Band power amplifiers
技术参数
- 型号：
MGF0919A
- 制造商：
MITSUBISHI
- 制造商全称：
Mitsubishi Electric Semiconductor
- 功能描述：
L & S BAND GaAs FET [ SMD non - matched ]
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
三凌 |
24+ |
NA/ |
15 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
MITSUBISHI/三菱 |
2450+ |
GF-55 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
询价 | ||
MITSUBISH |
25+23+ |
QFN |
21073 |
绝对原装正品全新进口深圳现货 |
询价 | ||
MITSUBISH |
20+ |
GF-50 |
29516 |
高频管全新原装主营-可开原型号增税票 |
询价 | ||
MITSUBSHI |
24+ |
SMD |
37279 |
郑重承诺只做原装进口现货 |
询价 | ||
MITSUBISHI/三菱 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
询价 | ||
MTS |
24+ |
9000 |
询价 | ||||
MITSUBISHI |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
M/A-COM |
24+ |
SMD |
5000 |
M/A-COM专营品牌绝对进口原装假一赔十 |
询价 | ||
MITSUBI |
23+ |
N/A |
7560 |
原厂原装 |
询价 |
