MGF0905A中文资料GaAs FET with an N-channel schottky gate数据手册MITSUBISHI规格书
MGF0905A规格书详情
描述 Description
DESCRIPTION
The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.
FEATURES
High output power
Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm
High power gain
Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm
High power added efficiency
P.A.E =40%(TYP.) @f=1.65GHz,Pin=26dBmAPPLICATION
For UHF Band power amplifiersQUALITY
GGRECOMMENDED BIAS CONDITIONS
Vds=8V
Ids=800mA
Rg=100Ω
Refer to Bias Procedure
特性 Features
High output power
Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm
High power gain
Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm
High power added efficiency
P.A.E =40%(TYP.) @f=1.65GHz,Pin=26dBmAPPLICATION
For UHF Band power amplifiersQUALITY
GGRECOMMENDED BIAS CONDITIONS
Vds=8V
Ids=800mA
Rg=100Ω
Refer to Bias Procedure
技术参数
- 型号:
MGF0905A
- 制造商:
MITSUBISHI
- 制造商全称:
Mitsubishi Electric Semiconductor
- 功能描述:
L,S BAND POWER GaAs FET
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FUJITSU/富士通 |
24+ |
NA/ |
66 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
TI |
23+ |
NA |
12000 |
全新原装假一赔十 |
询价 | ||
MITSUBISHI/三菱 |
2450+ |
SMD |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
MITSUBISHI/三菱 |
25+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
Mitsubish |
23+ |
NA |
1431 |
专做原装正品,假一罚百! |
询价 | ||
MITSUBISHI |
23+ |
高频管 |
750 |
专营高频管模块,全新原装! |
询价 | ||
MITSUBISH |
20+ |
GF-21 |
29516 |
高频管全新原装主营-可开原型号增税票 |
询价 | ||
24+ |
2000 |
本站现库存 |
询价 | ||||
MITSUBIS |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
询价 | ||
MITSUBISHI |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 |