SUPER LOW NOISE InGaAs HEMT

DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series

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MITSUBISHI

三菱电机

SUPER LOW NOISE InGaAs HEMT

DESCRIPTION\nThe MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series is m • Low noise figure                  @f=12GHz\n         MGF4916G:NFmin.=0.80dB(MAX.)\n         MGF4919G:NFmin.=0.50dB(MAX.)\n• High associated gain            @f=12GHz\n         Gs=12.0dB(MIN.)\n\nAPPLICATION\nL to Ku band low noise amplifiers.;

MinebeaMitsumi

美蓓亚三美

SUPER LOW NOISE InGaAs HEMT

DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The hermetically sealed metal-ceramic package assures minimumu parasitic losses, and has a configuration suitable for microstrip circuits. The MGF491*G series

文件：19.34 Kbytes 页数：3 Pages

MITSUBISHI

三菱电机

TAPE CARRIER SUPER LOW NOISE INGAAS HEMT

文件：579.62 Kbytes 页数：10 Pages

MITSUBISHI

三菱电机