MGF0917A

High-power GaAs FET (small signal gain stage);

MGF0917A

High-power GaAs FET (small signal gain stage)

MGF0917A

L & S BAND GaAs FET [ SMD non - matched ]

MGF0917A-01

High-power GaAs FET (small signal gain stage); • High output power\n   Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm\n• High power gain\n   Gp=21dB(TYP.) @f=1.9GHz\n• High power added efficiency\n add=38%(TYP.) @f=1.9GHz,Pin=4dBm\n• Hermetic PackageAPPLICATION\n• For UHF Band power amplifiers ;

L & S BAND / 0.25W SMD non - matchedDESCRIPTION\nThe MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.FEATURES\n• High output power\n   Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm\n• High power gain\n   Gp=21dB(TYP.) @f=1.9GHz\n• High power added efficiency\n add=38%(TYP.) @f=1.9GHz,Pin=4dBm\n• Hermetic PackageAPPLICATION\n• For UHF Band power amplifiers

MGF0917A_11

High-power GaAs FET (small signal gain stage)