LOW NOISE GaAs FET

DESCRIPTION The MGF1402B is a low-noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits. FEATURE

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MITSUBISHI

三菱电机

LOW NOISE GaAs FET

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MITSUMI

三美

低噪声GaAs FET

MITSUBISHI

三菱电机

SURFACE MOUNT SWITCHING DIODES

Case : SOT-23 Molded Plastic Operating Temperature : -65°C to 150°C

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JGD

固锝电子

RF & MICROWAVE TRANSISTORS

DESCRIPTION The MS1402 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. KEY FEATURES ◾ 450 - 512 MHz ◾ 12.5 Volts ◾ Efficiency 55 ◾ POUT =

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MICROSEMI

美高森美

RF AND MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION: The MS1402 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. Features • 450 - 512 MHz • 12.5 Volts • Efficiency 55 • POUT = 2.

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