L & S BAND GaAs FET

文件：28.01 Kbytes 页数：3 Pages

Mitsubishi

三菱电机

High-power GaAs FET (small signal gain stage)

文件：173.08 Kbytes 页数：3 Pages

Mitsubishi

三菱电机

High-power GaAs FET (small signal gain stage)

文件：173.08 Kbytes 页数：3 Pages

Mitsubishi

三菱电机

High-power GaAs FET (small signal gain stage)

DESCRIPTION\nThe MGF0912A, GaAs FET with an N-channel schottky gate, is designed for use in L/S band amplifiers.FEATURES\nHigh output power \n     Po=41.5dBm(TYP.) @f=1.9GHz,Pin=33dBm\nHigh power gain\n     Gp=10.5dB(TYP.) @f=1.9GHz\nHigh power added efficiency\n     P.A.E =38%(TYP.) @f=1.9GH High output power \n     Po=41.5dBm(TYP.) @f=1.9GHz,Pin=33dBm\nHigh power gain\n     Gp=10.5dB(TYP.) @f=1.9GHz\nHigh power added efficiency\n     P.A.E =38%(TYP.) @f=1.9GHz,Pin=33dBm\nHermetic PackageAPPLICATION\nFor L/S Band power amplifiers;

MinebeaMitsumi

美蓓亚三美

L & S BAND GaAs FET

MITSUBISHI

三菱电机