丝印：LMG；Package：WSON(DEE)；LMG1025-Q1 Automotive Low Side GaN and MOSFET Driver For High Frequency and Narrow Pulse Applications

1 Features • AEC-Q100 grade 1 qualified • 1.25ns typical minimum input pulse width • 2.6ns typical rising propagation delay • 2.9ns typical falling propagation delay • 300ps typical pulse distortion • Independent 7A pull-up and 5A pull-down current • 650ps typical rise time (220pF load) •

文件：2.21134 Mbytes 页数：30 Pages

TI

德州仪器

丝印：LMG；Package：WSON(DEE)；LMG1025-Q1 Automotive Low Side GaN and MOSFET Driver For High Frequency and Narrow Pulse Applications

1 Features • AEC-Q100 grade 1 qualified • 1.25ns typical minimum input pulse width • 2.6ns typical rising propagation delay • 2.9ns typical falling propagation delay • 300ps typical pulse distortion • Independent 7A pull-up and 5A pull-down current • 650ps typical rise time (220pF load) •

文件：2.21134 Mbytes 页数：30 Pages

TI

德州仪器

丝印：LMG；Package：WSON(DEE)；LMG1025-Q1 Automotive Low Side GaN and MOSFET Driver For High Frequency and Narrow Pulse Applications

1 Features • AEC-Q100 grade 1 qualified • 1.25ns typical minimum input pulse width • 2.6ns typical rising propagation delay • 2.9ns typical falling propagation delay • 300ps typical pulse distortion • Independent 7A pull-up and 5A pull-down current • 650ps typical rise time (220pF load) •

文件：2.21134 Mbytes 页数：30 Pages

TI

德州仪器

丝印：LMG；Package：WSON(DEE)；LMG1025-Q1 Automotive Low Side GaN and MOSFET Driver For High Frequency and Narrow Pulse Applications

1 Features • AEC-Q100 grade 1 qualified • 1.25ns typical minimum input pulse width • 2.6ns typical rising propagation delay • 2.9ns typical falling propagation delay • 300ps typical pulse distortion • Independent 7A pull-up and 5A pull-down current • 650ps typical rise time (220pF load) •

文件：2.21134 Mbytes 页数：30 Pages

TI

德州仪器

LMG1020-Q1 5V, 7A, 5A Low-Side GaN and MOSFET Driver For 1ns Pulse Width Automotive Applications

1 Features • Qualified for automotive applications • AEC-Q100 qualified – Device temperature grade 1 • Low-side, ultra-fast gate driver for GaN and silicon FETs • 1ns minimum input pulse width • Up to 60MHz operation • 2.5ns typical, 4.5ns maximum propagation delay • 400ps typical rise an

文件：1.12058 Mbytes 页数：22 Pages

TI

德州仪器

LMG1020 5-V, 7-A, 5-A Low-Side GaN and MOSFET Driver For 1-ns Pulse Width Applications

1 Features 1• Low-Side, Ultra-Fast Gate Driver for GaN and Silicon FETs • 1 ns Minimum Input Pulse Width • Up to 60 MHz Operation • 2.5 ns Typical, 4.5 ns Maximum Propagation Delay • 400 ps Typical Rise and Fall Time • 7-A Peak Source and 5-A Peak Sink Currents • 5-V Supply Voltage • UVL

文件：1.08708 Mbytes 页数：25 Pages

TI

德州仪器

LMG1020-Q1 5V, 7A, 5A Low-Side GaN and MOSFET Driver For 1ns Pulse Width Automotive Applications

1 Features • Qualified for automotive applications • AEC-Q100 qualified – Device temperature grade 1 • Low-side, ultra-fast gate driver for GaN and silicon FETs • 1ns minimum input pulse width • Up to 60MHz operation • 2.5ns typical, 4.5ns maximum propagation delay • 400ps typical rise an

文件：1.12058 Mbytes 页数：22 Pages

TI

德州仪器

LMG1020-Q1 5V, 7A, 5A Low-Side GaN and MOSFET Driver For 1ns Pulse Width Automotive Applications

1 Features • Qualified for automotive applications • AEC-Q100 qualified – Device temperature grade 1 • Low-side, ultra-fast gate driver for GaN and silicon FETs • 1ns minimum input pulse width • Up to 60MHz operation • 2.5ns typical, 4.5ns maximum propagation delay • 400ps typical rise an

文件：1.12058 Mbytes 页数：22 Pages

TI

德州仪器

LMG1020 5-V, 7-A, 5-A Low-Side GaN and MOSFET Driver For 1-ns Pulse Width Applications

1 Features 1• Low-Side, Ultra-Fast Gate Driver for GaN and Silicon FETs • 1 ns Minimum Input Pulse Width • Up to 60 MHz Operation • 2.5 ns Typical, 4.5 ns Maximum Propagation Delay • 400 ps Typical Rise and Fall Time • 7-A Peak Source and 5-A Peak Sink Currents • 5-V Supply Voltage • UVL

文件：1.08708 Mbytes 页数：25 Pages

TI

德州仪器

LMG1020 5-V, 7-A, 5-A Low-Side GaN and MOSFET Driver For 1-ns Pulse Width Applications

1 Features 1• Low-Side, Ultra-Fast Gate Driver for GaN and Silicon FETs • 1 ns Minimum Input Pulse Width • Up to 60 MHz Operation • 2.5 ns Typical, 4.5 ns Maximum Propagation Delay • 400 ps Typical Rise and Fall Time • 7-A Peak Source and 5-A Peak Sink Currents • 5-V Supply Voltage • UVL

文件：1.08708 Mbytes 页数：25 Pages

TI

德州仪器