| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
LMG2610 | LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters 1 Features • 650-V GaN power-FET half bridge • 170-mΩ low-side and 248-mΩ high-side GaN FETs • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high-bandwidth and high accuracy • Low-side / high-side gate-drive inter 文件:1.39575 Mbytes 页数:34 Pages | TI 德州仪器 | TI | |
LMG2610 | LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters 1 Features • 650-V GaN power-FET half bridge • 170-mΩ low-side and 248-mΩ high-side GaN FETs • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high-bandwidth and high accuracy • Low-side / high-side gate-drive inter 文件:1.28785 Mbytes 页数:42 Pages | TI 德州仪器 | TI | |
丝印:LMG2610NNNNC;Package:VQFN;LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters 1 Features • 650-V GaN power-FET half bridge • 170-mΩ low-side and 248-mΩ high-side GaN FETs • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high-bandwidth and high accuracy • Low-side / high-side gate-drive inter 文件:1.28785 Mbytes 页数:42 Pages | TI 德州仪器 | TI | ||
丝印:LMG2610NNNNC;Package:VQFN;LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters 1 Features • 650-V GaN power-FET half bridge • 170-mΩ low-side and 248-mΩ high-side GaN FETs • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high-bandwidth and high accuracy • Low-side / high-side gate-drive inter 文件:1.28785 Mbytes 页数:42 Pages | TI 德州仪器 | TI | ||
LMG2610 | 具有集成驱动器、保护和电流检测功能且适用于 ACF 的 650V 170/248mΩ GaN 半桥 | TI 德州仪器 | TI | |
LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters 1 Features • 650-V GaN power-FET half bridge • 170-mΩ low-side and 248-mΩ high-side GaN FETs • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high-bandwidth and high accuracy • Low-side / high-side gate-drive inter 文件:1.28785 Mbytes 页数:42 Pages | TI 德州仪器 | TI |
技术参数
- RDS (on) (Milliohm):
170
- ID (Max) (A):
5.4
- Rating:
Catalog
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI德州仪器 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
询价 | |||
Texas Instruments |
23+ |
SMD |
245 |
微芯专营原厂正品现货全系列 |
询价 | ||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源! |
询价 | ||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
询价 | |||
TI/德州仪器 |
25+ |
原厂封装 |
11000 |
询价 | |||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
询价 | |||
TI(德州仪器) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
VIS |
24+ |
32 |
询价 | ||||
TI/德州仪器 |
25+ |
原厂封装 |
9999 |
询价 | |||
TI/德州仪器 |
23+ |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |
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