首页 >LMG2610>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

LMG2610

LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters

1 Features • 650-V GaN power-FET half bridge • 170-mΩ low-side and 248-mΩ high-side GaN FETs • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high-bandwidth and high accuracy • Low-side / high-side gate-drive inter

文件:1.39575 Mbytes 页数:34 Pages

TI

德州仪器

LMG2610

LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters

1 Features • 650-V GaN power-FET half bridge • 170-mΩ low-side and 248-mΩ high-side GaN FETs • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high-bandwidth and high accuracy • Low-side / high-side gate-drive inter

文件:1.28785 Mbytes 页数:42 Pages

TI

德州仪器

LMG2610RRGR

丝印:LMG2610NNNNC;Package:VQFN;LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters

1 Features • 650-V GaN power-FET half bridge • 170-mΩ low-side and 248-mΩ high-side GaN FETs • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high-bandwidth and high accuracy • Low-side / high-side gate-drive inter

文件:1.28785 Mbytes 页数:42 Pages

TI

德州仪器

LMG2610RRGT

丝印:LMG2610NNNNC;Package:VQFN;LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters

1 Features • 650-V GaN power-FET half bridge • 170-mΩ low-side and 248-mΩ high-side GaN FETs • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high-bandwidth and high accuracy • Low-side / high-side gate-drive inter

文件:1.28785 Mbytes 页数:42 Pages

TI

德州仪器

LMG2610

具有集成驱动器、保护和电流检测功能且适用于 ACF 的 650V 170/248mΩ GaN 半桥

TI

德州仪器

LMG2610_V01

LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters

1 Features • 650-V GaN power-FET half bridge • 170-mΩ low-side and 248-mΩ high-side GaN FETs • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high-bandwidth and high accuracy • Low-side / high-side gate-drive inter

文件:1.28785 Mbytes 页数:42 Pages

TI

德州仪器

技术参数

  • RDS (on) (Milliohm):

    170

  • ID (Max) (A):

    5.4

  • Rating:

    Catalog

供应商型号品牌批号封装库存备注价格
TI德州仪器
22+
24000
原装正品现货,实单可谈,量大价优
询价
Texas Instruments
23+
SMD
245
微芯专营原厂正品现货全系列
询价
TI/德州仪器
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
询价
TI/德州仪器
25+
原厂封装
10280
询价
TI/德州仪器
25+
原厂封装
11000
询价
TI/德州仪器
25+
原厂封装
10280
询价
TI(德州仪器)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
询价
VIS
24+
32
询价
TI/德州仪器
25+
原厂封装
9999
询价
TI/德州仪器
23+
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
更多LMG2610供应商 更新时间2025-12-4 15:01:00