丝印：LMG2610NNNNC；Package：VQFN；LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters

1 Features • 650-V GaN power-FET half bridge • 170-mΩ low-side and 248-mΩ high-side GaN FETs • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high-bandwidth and high accuracy • Low-side / high-side gate-drive inter

文件：1.28785 Mbytes 页数：42 Pages

TI

德州仪器

丝印：LMG2610NNNNC；Package：VQFN；LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters

1 Features • 650-V GaN power-FET half bridge • 170-mΩ low-side and 248-mΩ high-side GaN FETs • Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high-bandwidth and high accuracy • Low-side / high-side gate-drive inter

文件：1.28785 Mbytes 页数：42 Pages

TI

德州仪器