零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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Marking:LMG2610NNNNC;Package:VQFN;LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters 1Features •650-VGaNpower-FEThalfbridge •170-mΩlow-sideand248-mΩhigh-sideGaNFETs •Integratedgatedriverswithlowpropagationdelays andadjustableturn-onslew-ratecontrol •Current-senseemulationwithhigh-bandwidthand highaccuracy •Low-side/high-sidegate-driveinter | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
Marking:LMG2610NNNNC;Package:VQFN;LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters 1Features •650-VGaNpower-FEThalfbridge •170-mΩlow-sideand248-mΩhigh-sideGaNFETs •Integratedgatedriverswithlowpropagationdelays andadjustableturn-onslew-ratecontrol •Current-senseemulationwithhigh-bandwidthand highaccuracy •Low-side/high-sidegate-driveinter | TITexas Instruments 德州仪器美国德州仪器公司 | TI |
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