丝印：LMG3422R050；Package：VQFN；LMG342xR050 600-V 50-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600-V GaN-on-Si FET with Integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns CMTI – 3.6-MHz switching frequency – 20-V/ns to 150-V/ns slew rate for optimization of switching performance and

文件：2.090719 Mbytes 页数：49 Pages

TI

德州仪器

丝印：LMG3422R050；Package：VQFN；LMG342xR050 600V 50mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 3.6MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance a

文件：2.8057 Mbytes 页数：54 Pages

TI

德州仪器

丝印：LMG3422R050；Package：VQFN；LMG342xR050 600V 50mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 3.6MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance a

文件：2.8057 Mbytes 页数：54 Pages

TI

德州仪器

丝印：LMG3422R050；Package：VQFN；LMG342xR050 600-V 50-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600-V GaN-on-Si FET with Integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns CMTI – 3.6-MHz switching frequency – 20-V/ns to 150-V/ns slew rate for optimization of switching performance and

文件：2.090719 Mbytes 页数：49 Pages

TI

德州仪器

丝印：LMG3422R050；Package：VQFN；LMG342xR050 600-V 50-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600-V GaN-on-Si FET with Integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns CMTI – 3.6-MHz switching frequency – 20-V/ns to 150-V/ns slew rate for optimization of switching performance and

文件：2.090719 Mbytes 页数：49 Pages

TI

德州仪器

丝印：LMG3422R050；Package：VQFN；LMG342xR050 600V 50mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 3.6MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance a

文件：2.8057 Mbytes 页数：54 Pages

TI

德州仪器

丝印：LMG3422R050；Package：VQFN；LMG342xR050 600-V 50-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600-V GaN-on-Si FET with Integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns CMTI – 3.6-MHz switching frequency – 20-V/ns to 150-V/ns slew rate for optimization of switching performance and

文件：2.090719 Mbytes 页数：49 Pages

TI

德州仪器

丝印：LMG3422R050；Package：VQFN；LMG342xR050 600V 50mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 3.6MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance a

文件：2.8057 Mbytes 页数：54 Pages

TI

德州仪器

LMG342xR050 600-V 50-m廓 GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600-V GaN-on-Si FET with Integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns CMTI – 3.6-MHz switching frequency – 20-V/ns to 150-V/ns slew rate for optimization of switching performance and

文件：2.090719 Mbytes 页数：49 Pages

TI

德州仪器

LMG342xR050 600V 50mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • Qualified for JEDEC JEP180 for hard-switching topologies • 600V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200V/ns FET hold-off – 3.6MHz switching frequency – 20V/ns to 150V/ns slew rate for optimization of switching performance a

文件：2.8057 Mbytes 页数：54 Pages

TI

德州仪器