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LMG3626REQR

丝印:LMG3626;Package:VQFN;LMG3626 650-V 270-mΩ GaN FET With Integrated Driver and Current-Sense Emulation

1 Features • 650-V 270-mΩ GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high bandwidth and high accuracy • Cycle-by-cycle overcurrent protection • Overtemperature protection with FLT pin reporting

文件:1.26799 Mbytes 页数:29 Pages

TI

德州仪器

LMG3626REQR

丝印:LMG3626NNNNC;Package:VQFN(REQ);LMG3626 700V, 220mΩ, GaN FET With Integrated Driver and Current-Sense Emulation

1 Features • 700V, 220mΩ, GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high bandwidth and high accuracy • Cycle-by-cycle overcurrent protection • Overtemperature protection with FLT pin reporting

文件:1.40469 Mbytes 页数:33 Pages

TI

德州仪器

LMG3626REQR.A

丝印:LMG3626NNNNC;Package:VQFN(REQ);LMG3626 700V, 220mΩ, GaN FET With Integrated Driver and Current-Sense Emulation

1 Features • 700V, 220mΩ, GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high bandwidth and high accuracy • Cycle-by-cycle overcurrent protection • Overtemperature protection with FLT pin reporting

文件:1.40469 Mbytes 页数:33 Pages

TI

德州仪器

LMG3626ZREQR

丝印:LMG3626NNNNC;Package:VQFN(REQ);LMG3626 700V, 220mΩ, GaN FET With Integrated Driver and Current-Sense Emulation

1 Features • 700V, 220mΩ, GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high bandwidth and high accuracy • Cycle-by-cycle overcurrent protection • Overtemperature protection with FLT pin reporting

文件:1.40469 Mbytes 页数:33 Pages

TI

德州仪器

LMG3626REQR

丝印:LMG3626;Package:VQFN;LMG3626 650-V 270-mΩ GaN FET With Integrated Driver and Current-Sense Emulation

1 Features • 650-V 270-mΩ GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high bandwidth and high accuracy • Cycle-by-cycle overcurrent protection • Overtemperature protection with FLT pin reporting

文件:1.26799 Mbytes 页数:29 Pages

TI

德州仪器

LMG3626REQR

丝印:LMG3626NNNNC;Package:VQFN(REQ);LMG3626 700V, 220mΩ, GaN FET With Integrated Driver and Current-Sense Emulation

1 Features • 700V, 220mΩ, GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high bandwidth and high accuracy • Cycle-by-cycle overcurrent protection • Overtemperature protection with FLT pin reporting

文件:1.40469 Mbytes 页数:33 Pages

TI

德州仪器

LMG3626REQR.A

丝印:LMG3626NNNNC;Package:VQFN(REQ);LMG3626 700V, 220mΩ, GaN FET With Integrated Driver and Current-Sense Emulation

1 Features • 700V, 220mΩ, GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high bandwidth and high accuracy • Cycle-by-cycle overcurrent protection • Overtemperature protection with FLT pin reporting

文件:1.40469 Mbytes 页数:33 Pages

TI

德州仪器

LMG3626ZREQR

丝印:LMG3626NNNNC;Package:VQFN(REQ);LMG3626 700V, 220mΩ, GaN FET With Integrated Driver and Current-Sense Emulation

1 Features • 700V, 220mΩ, GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high bandwidth and high accuracy • Cycle-by-cycle overcurrent protection • Overtemperature protection with FLT pin reporting

文件:1.40469 Mbytes 页数:33 Pages

TI

德州仪器

LMG3626

LMG3626 700V, 220mΩ, GaN FET With Integrated Driver and Current-Sense Emulation

1 Features • 700V, 220mΩ, GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high bandwidth and high accuracy • Cycle-by-cycle overcurrent protection • Overtemperature protection with FLT pin reporting

文件:1.40469 Mbytes 页数:33 Pages

TI

德州仪器

LMG3626

LMG3626 650-V 270-mΩ GaN FET With Integrated Driver and Current-Sense Emulation

1 Features • 650-V 270-mΩ GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high bandwidth and high accuracy • Cycle-by-cycle overcurrent protection • Overtemperature protection with FLT pin reporting

文件:1.26799 Mbytes 页数:29 Pages

TI

德州仪器

供应商型号品牌批号封装库存备注价格
TI
25+
38-VQFN(8x5.3)
18798
原装正品现货,原厂订货,可支持含税原型号开票。
询价
TI/德州仪器
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
询价
TI/德州仪器
25+
原厂封装
10280
询价
TI/德州仪器
25+
原厂封装
9999
询价
TI/德州仪器
25+
原厂封装
11000
询价
TI/德州仪器
25+
原厂封装
10280
询价
TI
25+
38-VQFN(8x5.3)
18746
样件支持,可原厂排单订货!
询价
NSC
2023+
SOP8
50000
原装现货
询价
原厂正品
23+
DIP16
5000
原装正品,假一罚十
询价
NS
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
更多LMG3626供应商 更新时间2026-1-20 16:37:00