丝印：LMG3626；Package：VQFN；LMG3626 650-V 270-mΩ GaN FET With Integrated Driver and Current-Sense Emulation

1 Features • 650-V 270-mΩ GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high bandwidth and high accuracy • Cycle-by-cycle overcurrent protection • Overtemperature protection with FLT pin reporting

文件：1.26799 Mbytes 页数：29 Pages

TI

德州仪器

丝印：LMG3626NNNNC；Package：VQFN(REQ)；LMG3626 700V, 220mΩ, GaN FET With Integrated Driver and Current-Sense Emulation

1 Features • 700V, 220mΩ, GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high bandwidth and high accuracy • Cycle-by-cycle overcurrent protection • Overtemperature protection with FLT pin reporting

文件：1.40469 Mbytes 页数：33 Pages

TI

德州仪器

丝印：LMG3626NNNNC；Package：VQFN(REQ)；LMG3626 700V, 220mΩ, GaN FET With Integrated Driver and Current-Sense Emulation

1 Features • 700V, 220mΩ, GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high bandwidth and high accuracy • Cycle-by-cycle overcurrent protection • Overtemperature protection with FLT pin reporting

文件：1.40469 Mbytes 页数：33 Pages

TI

德州仪器

LMG3626 700V, 220mΩ, GaN FET With Integrated Driver and Current-Sense Emulation

1 Features • 700V, 220mΩ, GaN power FET • Integrated gate driver with low propagation delays and adjustable turn-on slew-rate control • Current-sense emulation with high bandwidth and high accuracy • Cycle-by-cycle overcurrent protection • Overtemperature protection with FLT pin reporting

文件：1.40469 Mbytes 页数：33 Pages

TI

德州仪器