LMG365xR035 650V 35mΩ GaN FET With Integrated Driver and Protection

1 Features • 650V 35mΩ GaN power FET with integrated gate driver – >200V/ns FET hold-off – Adjustable slew rates for optimization of switching performance and EMI mitigation • 10V/ns to 100V/ns turn-on slew rates • 10V/ns to full speed turn-off slew rates – Operates with supply pin and inp

文件：1.6378 Mbytes 页数：43 Pages

TI

德州仪器

LMG365xR070 650V 70mΩ GaN FET With Integrated Driver and Protection

1 Features • 650V 70mΩ GaN power FET with integrated gate driver – >200V/ns FET hold-off – Adjustable slew rates for optimization of switching performance and EMI mitigation • 10V/ns to 100V/ns turn-on slew rates • 10V/ns to full speed turn-off slew rates – Operates with supply pin and inp

文件：1.60559 Mbytes 页数：43 Pages

TI

德州仪器

LMG365xR025 650V 25mΩ GaN FET With Integrated Driver and Protection

1 Features • 650V 25mΩ GaN power FET with integrated gate driver – >200V/ns FET hold-off – Adjustable slew rates for optimization of switching performance and EMI mitigation • 10V/ns to 100V/ns turn-on slew rates • 10V/ns to full speed turn-off slew rates – Operates with supply pin and inp

文件：1.6106 Mbytes 页数：43 Pages

TI

德州仪器

LMG365xR025 650V 25mΩ GaN FET With Integrated Driver and Protection

1 Features • 650V 25mΩ GaN power FET with integrated gate driver – >200V/ns FET hold-off – Adjustable slew rates for optimization of switching performance and EMI mitigation • 10V/ns to 80V/ns turn-on slew rates • 10V/ns to full speed turn-off slew rates – Operates with supply pin and inpu

文件：1.86678 Mbytes 页数：50 Pages

TI

德州仪器

具有集成驱动器、保护和零电压检测功能的 650V 25mΩ TOLL 封装 GaN FET

The LMG365xR025 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.\n\nAdjustable gate driver strength allows the control of turn-on and maximum turn-off slew rates independently, which 650V 25mΩ GaN power FET with integrated gate driver \n \n>200V/ns FET hold-off\n \nAdjustable slew rates for optimization of switching performance and EMI mitigation \n \n10V/ns to 100V/ns turn-on slew rates\n \n10V/ns to full speed turn-off slew rates\n \n\n \nOperates with supply pin and input log;

TI

德州仪器

LMG365xR025 650V 25mΩ GaN FET With Integrated Driver and Protection

1 Features • 650V 25mΩ GaN power FET with integrated gate driver – >200V/ns FET hold-off – Adjustable slew rates for optimization of switching performance and EMI mitigation • 10V/ns to 80V/ns turn-on slew rates • 10V/ns to full speed turn-off slew rates – Operates with supply pin and inpu

文件：1.86678 Mbytes 页数：50 Pages

TI

德州仪器