LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

1 Features 1• Integrated 15-mΩ GaN FETs and Driver • 80-V Continuous, 100-V Pulsed Voltage Rating • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Caus

文件：749.63 Kbytes 页数：29 Pages

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德州仪器

GaN Half-Bridge Power Stage

文件：299.64 Kbytes 页数：23 Pages

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德州仪器

丝印：LMG5200513B；Package：QFM；LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

1 Features 1• Integrated 15-mΩ GaN FETs and Driver • 80-V Continuous, 100-V Pulsed Voltage Rating • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Caus

文件：749.63 Kbytes 页数：29 Pages

TI

德州仪器

丝印：LMG5200513B；Package：QFM；LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

1 Features 1• Integrated 15-mΩ GaN FETs and Driver • 80-V Continuous, 100-V Pulsed Voltage Rating • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Caus

文件：749.63 Kbytes 页数：29 Pages

TI

德州仪器

丝印：LMG5200513B；Package：QFM；LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

1 Features 1• Integrated 15-mΩ GaN FETs and Driver • 80-V Continuous, 100-V Pulsed Voltage Rating • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Caus

文件：749.63 Kbytes 页数：29 Pages

TI

德州仪器

丝印：LMG5200513B；Package：QFM；LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

1 Features 1• Integrated 15-mΩ GaN FETs and Driver • 80-V Continuous, 100-V Pulsed Voltage Rating • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Caus

文件：749.63 Kbytes 页数：29 Pages

TI

德州仪器

丝印：LMG5200513B；Package：QFM；LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

1 Features 1• Integrated 15-mΩ GaN FETs and Driver • 80-V Continuous, 100-V Pulsed Voltage Rating • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Caus

文件：749.63 Kbytes 页数：29 Pages

TI

德州仪器

丝印：LMG5200513B；Package：QFM；LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

1 Features 1• Integrated 15-mΩ GaN FETs and Driver • 80-V Continuous, 100-V Pulsed Voltage Rating • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Caus

文件：749.63 Kbytes 页数：29 Pages

TI

德州仪器

80V GaN 半桥功率级

LMG5200 器件集成了 80V、10A 驱动器和 GaN 半桥功率级，采用增强模式氮化镓 (GaN) FET 提供了一套集成功率级解决方案。该器件包含两个 80V GaN FET，它们由采用半桥配置的同一高频 GaN FET 驱动器提供驱动。\n\nGaN FET 在功率转换方面的优势显著，因为其反向恢复电荷几乎为零，输入电容 CISS 也非常小。所有器件均安装在一个完全无键合线的封装平台上，尽可能减少了封装寄生元件数。LMG5200 器件采用 6mm × 8mm × 2mm 无铅封装，可轻松安装在 PCB 上。\n\n该器件的输入与 TTL 逻辑兼容，无论 VCC 电压如何，都能够承受高 • 集成 15mΩ GaN FET 和驱动器\n• 80V 连续电压，100V 脉冲电压额定值\n• 封装经过优化，可实现简单的 PCB 布局，无需考虑底层填料、爬电和余隙要求\n• 超低共源电感可确保实现高压摆率开关，同时在硬开关拓扑中不会造成过度振铃\n• 非常适合隔离式和非隔离式 应用\n• 栅极驱动器支持高达 10MHz 的开关频率\n• 内部自举电源电压钳位可防止 GaN FET 过驱\n• 电源轨欠压锁定保护\n• 优异的传播延迟（典型值为 29.5ns）和匹配（典型值为 2ns）\n• 低功耗;

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德州仪器

GaN TECHNOLOGY PREVIEWLMG5200 80-V, GaN Half-Bridge Power Stage

文件：229.36 Kbytes 页数：23 Pages

TI

德州仪器