LMG365xR035 650V 35mΩ GaN FET With Integrated Driver and Protection

1 Features • 650V 35mΩ GaN power FET with integrated gate driver – >200V/ns FET hold-off – Adjustable slew rates for optimization of switching performance and EMI mitigation • 10V/ns to 100V/ns turn-on slew rates • 10V/ns to full speed turn-off slew rates – Operates with supply pin and inp

文件：1.6378 Mbytes 页数：43 Pages

TI

德州仪器

LMG365xR070 650V 70mΩ GaN FET With Integrated Driver and Protection

1 Features • 650V 70mΩ GaN power FET with integrated gate driver – >200V/ns FET hold-off – Adjustable slew rates for optimization of switching performance and EMI mitigation • 10V/ns to 100V/ns turn-on slew rates • 10V/ns to full speed turn-off slew rates – Operates with supply pin and inp

文件：1.60559 Mbytes 页数：43 Pages

TI

德州仪器

LMG365xR025 650V 25mΩ GaN FET With Integrated Driver and Protection

1 Features • 650V 25mΩ GaN power FET with integrated gate driver – >200V/ns FET hold-off – Adjustable slew rates for optimization of switching performance and EMI mitigation • 10V/ns to 100V/ns turn-on slew rates • 10V/ns to full speed turn-off slew rates – Operates with supply pin and inp

文件：1.6106 Mbytes 页数：43 Pages

TI

德州仪器

QFM9

TI/德州仪器

上传：深圳市胜彬电子有限公司

HIT

上传：飞利飞科技有限公司