丝印：LMG5200513B；Package：QFM；LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

1 Features 1• Integrated 15-mΩ GaN FETs and Driver • 80-V Continuous, 100-V Pulsed Voltage Rating • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Caus

文件：749.63 Kbytes 页数：29 Pages

TI

德州仪器

丝印：LMG5200513B；Package：QFM；LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

1 Features 1• Integrated 15-mΩ GaN FETs and Driver • 80-V Continuous, 100-V Pulsed Voltage Rating • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Caus

文件：749.63 Kbytes 页数：29 Pages

TI

德州仪器

丝印：LMG5200513B；Package：QFM；LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

1 Features 1• Integrated 15-mΩ GaN FETs and Driver • 80-V Continuous, 100-V Pulsed Voltage Rating • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Caus

文件：749.63 Kbytes 页数：29 Pages

TI

德州仪器

丝印：LMG5200513B；Package：QFM；LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

1 Features 1• Integrated 15-mΩ GaN FETs and Driver • 80-V Continuous, 100-V Pulsed Voltage Rating • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Caus

文件：749.63 Kbytes 页数：29 Pages

TI

德州仪器

丝印：LMG5200513B；Package：QFM；LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

1 Features 1• Integrated 15-mΩ GaN FETs and Driver • 80-V Continuous, 100-V Pulsed Voltage Rating • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Caus

文件：749.63 Kbytes 页数：29 Pages

TI

德州仪器

丝印：LMG5200513B；Package：QFM；LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

1 Features 1• Integrated 15-mΩ GaN FETs and Driver • 80-V Continuous, 100-V Pulsed Voltage Rating • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Caus

文件：749.63 Kbytes 页数：29 Pages

TI

德州仪器