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LMG5200MOFT.B中文资料德州仪器数据手册PDF规格书

LMG5200MOFT.B
厂商型号

LMG5200MOFT.B

功能描述

LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

丝印标识

LMG5200513B

封装外壳

QFM

文件大小

749.63 Kbytes

页面数量

29

生产厂商 Texas Instruments
企业简称

TI2德州仪器

中文名称

美国德州仪器公司官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-8-2 23:00:00

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LMG5200MOFT.B规格书详情

1 Features

1• Integrated 15-mΩ GaN FETs and Driver

• 80-V Continuous, 100-V Pulsed Voltage Rating

• Package Optimized for Easy PCB Layout,

Eliminating Need for Underfill, Creepage, and

Clearance Requirements

• Very Low Common Source Inductance to Ensure

High Slew Rate Switching Without Causing

Excessive Ringing in Hard-Switched Topologies

• Ideal for Isolated and Non-Isolated Applications

• Gate Driver Capable of Up to 10 MHz Switching

• Internal Bootstrap Supply Voltage Clamping to

Prevent GaN FET Overdrive

• Supply Rail Undervoltage Lockout Protection

• Excellent Propagation Delay (29.5 ns Typical) and

Matching (2 ns Typical)

• Low Power Consumption

2 Applications

• Wide VIN Multi-MHz Synchronous Buck

Converters

• Class D Amplifiers for Audio

• 48-V Point-of-Load (POL) Converters for Telecom,

Industrial, and Enterprise Computing

• High Power Density Single- and Three-Phase

Motor Drive

3 Description

The LMG5200 device, an 80-V, 10-A driver plus GaN

half-bridge power stage, provides an integrated

power stage solution using enhancement-mode

Gallium Nitride (GaN) FETs. The device consists of

two 80-V GaN FETs driven by one high-frequency

GaN FET driver in a half-bridge configuration.

GaN FETs provide significant advantages for power

conversion as they have near zero reverse recovery

and very small input capacitance CISS. All the devices

are mounted on a completely bond-wire free package

platform with minimized package parasitic elements.

The LMG5200 device is available in a 6 mm × 8 mm

× 2 mm lead-free package and can be easily

mounted on PCBs.

The TTL logic compatible inputs can withstand input

voltages up to 12 V regardless of the VCC voltage.

The proprietary bootstrap voltage clamping technique

ensures the gate voltages of the enhancement mode

GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN

FETs by offering a more user-friendly interface. It is

an ideal solution for applications requiring highfrequency,

high-efficiency operation in a small form

factor. When used with the TPS53632G controller,

the LMG5200 enables direct conversion from 48-V to

point-of-load voltages (0.5-1.5 V).

供应商 型号 品牌 批号 封装 库存 备注 价格
TI(德州仪器)
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现货供应,当天可交货!免费送样,原厂技术支持!!!
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全新原装假一赔十
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0805LED
9868
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NS
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3000
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NS
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LLP-16
4600
绝对全新原装!优势供货渠道!特价!请放心订购!
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HITACHI/日立
2450+
LCD
8540
只做原装正品假一赔十为客户做到零风险!!
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CK
20
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3000
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