丝印：LMG5200513B；Package：QFM；LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

1 Features 1• Integrated 15-mΩ GaN FETs and Driver • 80-V Continuous, 100-V Pulsed Voltage Rating • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Caus

文件：749.63 Kbytes 页数：29 Pages

TI

德州仪器

GaN Half-Bridge Power Stage

文件：299.64 Kbytes 页数：23 Pages

TI

德州仪器

丝印：LMG5200513B；Package：QFM；LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

1 Features 1• Integrated 15-mΩ GaN FETs and Driver • 80-V Continuous, 100-V Pulsed Voltage Rating • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Caus

文件：749.63 Kbytes 页数：29 Pages

TI

德州仪器

丝印：LMG5200513B；Package：QFM；LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

1 Features 1• Integrated 15-mΩ GaN FETs and Driver • 80-V Continuous, 100-V Pulsed Voltage Rating • Package Optimized for Easy PCB Layout, Eliminating Need for Underfill, Creepage, and Clearance Requirements • Very Low Common Source Inductance to Ensure High Slew Rate Switching Without Caus

文件：749.63 Kbytes 页数：29 Pages

TI

德州仪器

Package：9-QFN；包装：托盘 类别：集成电路（IC） 全半桥驱动器 描述：IC HALF-BRIDGE DRIVER GAN 9QFM

TI2

德州仪器