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LMG5200MOFR.B中文资料德州仪器数据手册PDF规格书

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厂商型号

LMG5200MOFR.B

功能描述

LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

丝印标识

LMG5200513B

封装外壳

QFM

文件大小

749.63 Kbytes

页面数量

29

生产厂商

TI

中文名称

德州仪器

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-12-14 10:45:00

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LMG5200MOFR.B规格书详情

1 Features

1• Integrated 15-mΩ GaN FETs and Driver

• 80-V Continuous, 100-V Pulsed Voltage Rating

• Package Optimized for Easy PCB Layout,

Eliminating Need for Underfill, Creepage, and

Clearance Requirements

• Very Low Common Source Inductance to Ensure

High Slew Rate Switching Without Causing

Excessive Ringing in Hard-Switched Topologies

• Ideal for Isolated and Non-Isolated Applications

• Gate Driver Capable of Up to 10 MHz Switching

• Internal Bootstrap Supply Voltage Clamping to

Prevent GaN FET Overdrive

• Supply Rail Undervoltage Lockout Protection

• Excellent Propagation Delay (29.5 ns Typical) and

Matching (2 ns Typical)

• Low Power Consumption

2 Applications

• Wide VIN Multi-MHz Synchronous Buck

Converters

• Class D Amplifiers for Audio

• 48-V Point-of-Load (POL) Converters for Telecom,

Industrial, and Enterprise Computing

• High Power Density Single- and Three-Phase

Motor Drive

3 Description

The LMG5200 device, an 80-V, 10-A driver plus GaN

half-bridge power stage, provides an integrated

power stage solution using enhancement-mode

Gallium Nitride (GaN) FETs. The device consists of

two 80-V GaN FETs driven by one high-frequency

GaN FET driver in a half-bridge configuration.

GaN FETs provide significant advantages for power

conversion as they have near zero reverse recovery

and very small input capacitance CISS. All the devices

are mounted on a completely bond-wire free package

platform with minimized package parasitic elements.

The LMG5200 device is available in a 6 mm × 8 mm

× 2 mm lead-free package and can be easily

mounted on PCBs.

The TTL logic compatible inputs can withstand input

voltages up to 12 V regardless of the VCC voltage.

The proprietary bootstrap voltage clamping technique

ensures the gate voltages of the enhancement mode

GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN

FETs by offering a more user-friendly interface. It is

an ideal solution for applications requiring highfrequency,

high-efficiency operation in a small form

factor. When used with the TPS53632G controller,

the LMG5200 enables direct conversion from 48-V to

point-of-load voltages (0.5-1.5 V).

供应商 型号 品牌 批号 封装 库存 备注 价格
TI(德州仪器)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
TI/德州仪器
23+
QFM-9
12700
买原装认准中赛美
询价
TI/德州仪器
2022+
QFM-9
7600
原厂原装,假一罚十
询价
TI(德州仪器)
25+
N/A
6000
原装,请咨询
询价
TI(德州仪器)
23+
N/A
6000
公司只做原装,可来电咨询
询价
Texas Instruments
24+
9-QFM(8x6)
98500
一级代理/放心采购
询价
TI/德州仪器
24+
N/A
20000
原厂直供原装正品
询价
TI/德州仪器
23+
QFM-9
50000
全新原装正品现货,支持订货
询价
TI/德州仪器
25+
9-QFM
65248
百分百原装现货 实单必成
询价
TI(德州仪器)
23+
QFM-9
15000
专业帮助客户找货 配单,诚信可靠!
询价