LMG5200MOFR集成电路（IC）的全半桥驱动器规格书PDF中文资料

LMG5200MOFR属于集成电路（IC）的全半桥驱动器。由美国德州仪器公司制造生产的LMG5200MOFR全半桥驱动器器件属于电桥驱动器电源管理集成电路 (PMIC) 系列，包含两个或多个功率晶体管，以及在外部器件控制下将其用作开关所需的电路。这些晶体管通常在内部配置为成对串联连接（称为半桥），因而任意指定晶体管对之间的结点都可以连接至两个电源轨中的任一个。这类器件常用于将控制器件（如微控制器）提供的低电平信号转换为操作执行器（如步进电机或无刷电机）所需的较大功率信号。

1 Features

1• Integrated 15-mΩ GaN FETs and Driver

• 80-V Continuous, 100-V Pulsed Voltage Rating

• Package Optimized for Easy PCB Layout,

Eliminating Need for Underfill, Creepage, and

Clearance Requirements

• Very Low Common Source Inductance to Ensure

High Slew Rate Switching Without Causing

Excessive Ringing in Hard-Switched Topologies

• Ideal for Isolated and Non-Isolated Applications

• Gate Driver Capable of Up to 10 MHz Switching

• Internal Bootstrap Supply Voltage Clamping to

Prevent GaN FET Overdrive

• Supply Rail Undervoltage Lockout Protection

• Excellent Propagation Delay (29.5 ns Typical) and

Matching (2 ns Typical)

• Low Power Consumption

2 Applications

• Wide VIN Multi-MHz Synchronous Buck

Converters

• Class D Amplifiers for Audio

• 48-V Point-of-Load (POL) Converters for Telecom,

Industrial, and Enterprise Computing

• High Power Density Single- and Three-Phase

Motor Drive

3 Description

The LMG5200 device, an 80-V, 10-A driver plus GaN

half-bridge power stage, provides an integrated

power stage solution using enhancement-mode

Gallium Nitride (GaN) FETs. The device consists of

two 80-V GaN FETs driven by one high-frequency

GaN FET driver in a half-bridge configuration.

GaN FETs provide significant advantages for power

conversion as they have near zero reverse recovery

and very small input capacitance CISS. All the devices

are mounted on a completely bond-wire free package

platform with minimized package parasitic elements.

The LMG5200 device is available in a 6 mm × 8 mm

× 2 mm lead-free package and can be easily

mounted on PCBs.

The TTL logic compatible inputs can withstand input

voltages up to 12 V regardless of the VCC voltage.

The proprietary bootstrap voltage clamping technique

ensures the gate voltages of the enhancement mode

GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN

FETs by offering a more user-friendly interface. It is

an ideal solution for applications requiring highfrequency,

high-efficiency operation in a small form

factor. When used with the TPS53632G controller,

the LMG5200 enables direct conversion from 48-V to

point-of-load voltages (0.5-1.5 V).