LMG3656R070中文资料德州仪器数据手册PDF规格书

1 Features

• 650V 70mΩ GaN power FET with integrated gate

driver

– >200V/ns FET hold-off

– Adjustable slew rates for optimization of

switching performance and EMI mitigation

• 10V/ns to 100V/ns turn-on slew rates

• 10V/ns to full speed turn-off slew rates

– Operates with supply pin and input logic pin

voltage range from 9V to 26V

• Robust Protection

– Cycle-by-cycle overcurrent and latched shortcircuit

protection with <300ns response

– Withstands 720V surge while hard-switching

– Self-protection from internal overtemperature

and UVLO monitoring

• 9.8mm × 11.6mm TOLL package witht thermal pad

2 Applications

• Merchant network and server PSU

• Merchant telecom rectifiers

• Solar inverters and industrial motor drives

• Uninterruptible power supplies

3 Description

The LMG365xR070 GaN FET with integrated driver

and protection is targeted at switch-mode power

converters and enables designers to achieve new

levels of power density and efficiency.

Adjustable gate driver strength allows the control

of turn-on and maximum turn-off slew rates

independently, which can be used to actively control

EMI and optimize switching performance. Turn on

slew rate can be varied from 10V/ns to 100V/ns, while

the turn off slew rate can be limited from 10V/ns to

a maximum based on the magnitude of load current.

Protection features include under-voltage lockout

(UVLO), cycle-by-cycle overcurrent limit, short-circuit

and overtemperature protection. The LMG3651R070

provides a 5V LDO output on LDO5V pin that

can be used to power external digital isolator. The

LMG3656R070 includes the zero-voltage detection

(ZVD) feature which provides a pulse output from the

ZVD pin when zero-voltage switching is realized. The

LMG3657R070 includes the zero-current detection

(ZCD) feature that sets the ZCD pin high when the

drain-to-source current is negative and transitions to

low upon detecting the zero-crossing point.