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LMG5200MOFT集成电路(IC)的全半桥驱动器规格书PDF中文资料

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厂商型号

LMG5200MOFT

参数属性

LMG5200MOFT 封装/外壳为9-QFN;包装为托盘;类别为集成电路(IC)的全半桥驱动器;LMG5200MOFT应用范围:同步降压转换器;产品描述:IC HALF-BRIDGE DRIVER GAN 9QFM

功能描述

LMG5200 80-V, 10-A GaN Half-Bridge Power Stage

丝印标识

LMG5200513B

封装外壳

QFM / 9-QFN

文件大小

749.63 Kbytes

页面数量

29

生产厂商

TI

中文名称

德州仪器

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-10-9 19:08:00

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LMG5200MOFT价格和库存,欢迎联系客服免费人工找货

LMG5200MOFT规格书详情

1 Features

1• Integrated 15-mΩ GaN FETs and Driver

• 80-V Continuous, 100-V Pulsed Voltage Rating

• Package Optimized for Easy PCB Layout,

Eliminating Need for Underfill, Creepage, and

Clearance Requirements

• Very Low Common Source Inductance to Ensure

High Slew Rate Switching Without Causing

Excessive Ringing in Hard-Switched Topologies

• Ideal for Isolated and Non-Isolated Applications

• Gate Driver Capable of Up to 10 MHz Switching

• Internal Bootstrap Supply Voltage Clamping to

Prevent GaN FET Overdrive

• Supply Rail Undervoltage Lockout Protection

• Excellent Propagation Delay (29.5 ns Typical) and

Matching (2 ns Typical)

• Low Power Consumption

2 Applications

• Wide VIN Multi-MHz Synchronous Buck

Converters

• Class D Amplifiers for Audio

• 48-V Point-of-Load (POL) Converters for Telecom,

Industrial, and Enterprise Computing

• High Power Density Single- and Three-Phase

Motor Drive

3 Description

The LMG5200 device, an 80-V, 10-A driver plus GaN

half-bridge power stage, provides an integrated

power stage solution using enhancement-mode

Gallium Nitride (GaN) FETs. The device consists of

two 80-V GaN FETs driven by one high-frequency

GaN FET driver in a half-bridge configuration.

GaN FETs provide significant advantages for power

conversion as they have near zero reverse recovery

and very small input capacitance CISS. All the devices

are mounted on a completely bond-wire free package

platform with minimized package parasitic elements.

The LMG5200 device is available in a 6 mm × 8 mm

× 2 mm lead-free package and can be easily

mounted on PCBs.

The TTL logic compatible inputs can withstand input

voltages up to 12 V regardless of the VCC voltage.

The proprietary bootstrap voltage clamping technique

ensures the gate voltages of the enhancement mode

GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN

FETs by offering a more user-friendly interface. It is

an ideal solution for applications requiring highfrequency,

high-efficiency operation in a small form

factor. When used with the TPS53632G controller,

the LMG5200 enables direct conversion from 48-V to

point-of-load voltages (0.5-1.5 V).

产品属性

  • 产品编号:

    LMG5200MOFT

  • 制造商:

    Texas Instruments

  • 类别:

    集成电路(IC) > 全半桥驱动器

  • 包装:

    托盘

  • 输出配置:

    半桥

  • 应用:

    同步降压转换器

  • 接口:

    逻辑

  • 负载类型:

    电感

  • 技术:

    NMOS

  • 导通电阻(典型值):

    15 毫欧 LS,15 毫欧 HS

  • 电流 - 输出/通道:

    10A

  • 电压 - 供电:

    4.75V ~ 5.25V

  • 电压 - 负载:

    80V

  • 工作温度:

    -40°C ~ 125°C(TJ)

  • 特性:

    自举电路

  • 故障保护:

    UVLO

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    9-QFN

  • 供应商器件封装:

    9-QFN(8x6)

  • 描述:

    IC HALF-BRIDGE DRIVER GAN 9QFM

供应商 型号 品牌 批号 封装 库存 备注 价格
TI(德州仪器)
2450+
SMD
9850
只做原装正品代理渠道!假一赔三!
询价
TI
24+
SMD
15600
门驱动器
询价
TI(德州仪器)
24+/25+
10000
原装正品现货库存价优
询价
TI(德州仪器)
2024+
QFM-9
500000
诚信服务,绝对原装原盘
询价
Texas
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
TI/德州仪器
23+
QFM-9
12700
买原装认准中赛美
询价
TI/德州仪器
24+
NA/
250
优势代理渠道,原装正品,可全系列订货开增值税票
询价
TI/德州仪器
25+
QFM-9
3100
强势库存!绝对原装公司现货!
询价
TI/德州仪器
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
询价
TI(德州仪器)
24+
N/A
6000
原装,正品
询价