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LMG5200MOFT集成电路(IC)的全半桥驱动器规格书PDF中文资料

厂商型号 |
LMG5200MOFT |
参数属性 | LMG5200MOFT 封装/外壳为9-QFN;包装为托盘;类别为集成电路(IC)的全半桥驱动器;LMG5200MOFT应用范围:同步降压转换器;产品描述:IC HALF-BRIDGE DRIVER GAN 9QFM |
功能描述 | LMG5200 80-V, 10-A GaN Half-Bridge Power Stage |
丝印标识 | |
封装外壳 | QFM / 9-QFN |
文件大小 |
749.63 Kbytes |
页面数量 |
29 页 |
生产厂商 | TI |
中文名称 | 德州仪器 |
网址 | |
数据手册 | |
更新时间 | 2025-10-9 19:08:00 |
人工找货 | LMG5200MOFT价格和库存,欢迎联系客服免费人工找货 |
LMG5200MOFT规格书详情
1 Features
1• Integrated 15-mΩ GaN FETs and Driver
• 80-V Continuous, 100-V Pulsed Voltage Rating
• Package Optimized for Easy PCB Layout,
Eliminating Need for Underfill, Creepage, and
Clearance Requirements
• Very Low Common Source Inductance to Ensure
High Slew Rate Switching Without Causing
Excessive Ringing in Hard-Switched Topologies
• Ideal for Isolated and Non-Isolated Applications
• Gate Driver Capable of Up to 10 MHz Switching
• Internal Bootstrap Supply Voltage Clamping to
Prevent GaN FET Overdrive
• Supply Rail Undervoltage Lockout Protection
• Excellent Propagation Delay (29.5 ns Typical) and
Matching (2 ns Typical)
• Low Power Consumption
2 Applications
• Wide VIN Multi-MHz Synchronous Buck
Converters
• Class D Amplifiers for Audio
• 48-V Point-of-Load (POL) Converters for Telecom,
Industrial, and Enterprise Computing
• High Power Density Single- and Three-Phase
Motor Drive
3 Description
The LMG5200 device, an 80-V, 10-A driver plus GaN
half-bridge power stage, provides an integrated
power stage solution using enhancement-mode
Gallium Nitride (GaN) FETs. The device consists of
two 80-V GaN FETs driven by one high-frequency
GaN FET driver in a half-bridge configuration.
GaN FETs provide significant advantages for power
conversion as they have near zero reverse recovery
and very small input capacitance CISS. All the devices
are mounted on a completely bond-wire free package
platform with minimized package parasitic elements.
The LMG5200 device is available in a 6 mm × 8 mm
× 2 mm lead-free package and can be easily
mounted on PCBs.
The TTL logic compatible inputs can withstand input
voltages up to 12 V regardless of the VCC voltage.
The proprietary bootstrap voltage clamping technique
ensures the gate voltages of the enhancement mode
GaN FETs are within a safe operating range.
The device extends advantages of discrete GaN
FETs by offering a more user-friendly interface. It is
an ideal solution for applications requiring highfrequency,
high-efficiency operation in a small form
factor. When used with the TPS53632G controller,
the LMG5200 enables direct conversion from 48-V to
point-of-load voltages (0.5-1.5 V).
产品属性
- 产品编号:
LMG5200MOFT
- 制造商:
Texas Instruments
- 类别:
集成电路(IC) > 全半桥驱动器
- 包装:
托盘
- 输出配置:
半桥
- 应用:
同步降压转换器
- 接口:
逻辑
- 负载类型:
电感
- 技术:
NMOS
- 导通电阻(典型值):
15 毫欧 LS,15 毫欧 HS
- 电流 - 输出/通道:
10A
- 电压 - 供电:
4.75V ~ 5.25V
- 电压 - 负载:
80V
- 工作温度:
-40°C ~ 125°C(TJ)
- 特性:
自举电路
- 故障保护:
UVLO
- 安装类型:
表面贴装型
- 封装/外壳:
9-QFN
- 供应商器件封装:
9-QFN(8x6)
- 描述:
IC HALF-BRIDGE DRIVER GAN 9QFM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TI(德州仪器) |
2450+ |
SMD |
9850 |
只做原装正品代理渠道!假一赔三! |
询价 | ||
TI |
24+ |
SMD |
15600 |
门驱动器 |
询价 | ||
TI(德州仪器) |
24+/25+ |
10000 |
原装正品现货库存价优 |
询价 | |||
TI(德州仪器) |
2024+ |
QFM-9 |
500000 |
诚信服务,绝对原装原盘 |
询价 | ||
Texas |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
TI/德州仪器 |
23+ |
QFM-9 |
12700 |
买原装认准中赛美 |
询价 | ||
TI/德州仪器 |
24+ |
NA/ |
250 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
TI/德州仪器 |
25+ |
QFM-9 |
3100 |
强势库存!绝对原装公司现货! |
询价 | ||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源! |
询价 | ||
TI(德州仪器) |
24+ |
N/A |
6000 |
原装,正品 |
询价 |