丝印：LMG3522R050；Package：VQFN；LMG3522R050 650-V 50-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • 650-V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns FET hold-off – 3.6-MHz switching frequency – 15-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5-V to 18-V supply

文件：2.78283 Mbytes 页数：40 Pages

TI

德州仪器

丝印：LMG3522R050；Package：VQFN；LMG3522R050 650-V 50-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • 650-V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns FET hold-off – 3.6-MHz switching frequency – 15-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5-V to 18-V supply

文件：2.78283 Mbytes 页数：40 Pages

TI

德州仪器

丝印：LMG3522R050；Package：VQFN；LMG3522R050 650-V 50-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • 650-V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns FET hold-off – 3.6-MHz switching frequency – 15-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5-V to 18-V supply

文件：2.78283 Mbytes 页数：40 Pages

TI

德州仪器

丝印：LMG3522R050；Package：VQFN；LMG3522R050 650-V 50-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • 650-V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns FET hold-off – 3.6-MHz switching frequency – 15-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5-V to 18-V supply

文件：2.78283 Mbytes 页数：40 Pages

TI

德州仪器

LMG3522R050 650-V 50-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting

1 Features • 650-V GaN-on-Si FET with integrated gate driver – Integrated high precision gate bias voltage – 200-V/ns FET hold-off – 3.6-MHz switching frequency – 15-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation – Operates from 7.5-V to 18-V supply

文件：2.78283 Mbytes 页数：40 Pages

TI

德州仪器